SIEMENS BB 664 Manual
Contents
1. WAFS RATES BME MAA SIEMENS LAN EAF Silicon Variable Capacitance Diode Preliminary data e For VHF TV tuners e High capacitance ratio e Low series inductance e Low series resistance e Extremely small plastic SMD package e Excellent uniformity and matching due to in line matching assembly procedure BB 664 1 VES05991 Type Pin Configuration Package BB 664 Q62702 BO909 unmatched SCD 80 BB 664 Q62702 B0908 in lined matched Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR Peak reverse voltage R gt 5kQ VRM Forward current Ie Operating temperature range Top Storage temperature Tsto Semiconductor Group 1998 11 01 SIEMENS BB 664 Electrical Characteristics at 7 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC characteristics Reverse current Ip nA VR 30 V Reverse current IR VR 30 V Ta 85 C AC characteristics Diode capacitance Vg 1V f 1 MHz Vg 2 V f 1 MHz VR 25 V f 1 MHz Ve 28 V f 1 MHz Capacitance ratio VR 2 V Vg 25 V f 1 MHz Capacitance ratio VR 1 V Vg 28 V f 1 MHz Capacitance ratio 1 Vg 1V Vg 28 V f 1 MHz Series resistance Vg 5V f 470 MHz Series inductance 1 In line matching For details please refer to Application Note 047 Semiconductor Group2. 1998 11 01 SIEMENS BB 664 Diode capacitance Cr f Vp f 1MHz 40 CT 30 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30 Vp Semiconductor Group 3 1998 11 01
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