lnfineon BB659E6805 Manual
Contents
1. 02 b q B b B b q B Q 03 r C R C C R C r R 04 d s D S d D S d s D S 05 e t E T e E T e t E T 06 f U f F U f U 07 g V G V g G V g V G V 08 h X H X h H X h x H X 09 j y J Y j J Y j y J Y 10 k z K Z k K Z k z K Z 11 2 L 4 4 2 L 4 12 n 3 N 5 n N 5 n 3 N 5 62 5 2005 10 19 Infineon BB659E6805 Published by Infineon Technologies AG St Martin Strasse 53 81669 M nchen Infineon Technologies AG 2005 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office www Infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in life support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected2. MRES T ARR Mes ARAN BKA Infineon BB659E6805 Silicon Variable Capacitance Diode e C1y capacitance selection for Samsung For VHF TV tuners High capacitance ratio Low series inductance Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to in line matching assembly procedure k Type Package Configuration Le nH Markin BB659E6805 SCD80 single DE Maximum Ratings at 7 25 C unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Vn Peak reverse voltage R 5kQ VRM Forward current lE Operating temperature range Top Storage temperature 1 2005 10 19 Cinfineon BB659E6805 Electrical Characteristics at 74 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC Characteristics Reverse current IR Vg 30 V Vg 30 V 85 Electrical Characteristics at 25 C unless otherwise specified Parameter Symbol Values Unit min typ max AC Characteristics Diode capacitance Vg 1 f 1 MHz Vp 2 1 MHz Vg 25 V f 1 MHz VR 28 V f 1 MHz Capacitance ratio Vg 21 V 28 f 1 MHz Cr1 Crog Capacitance ratio VR 22V 25 f 1 MHz 5 Series resistance VR 25V f 470 MHz Is 2005 10 19 Cinfineon Diode capa
3. to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered 6 2005 10 19
4. citance f Vp f 1MHz 40 CT Reverse current p f TA Vg 28V 103 pA 10 BB659E6805 Temperature coefficient of the diode capacitance f Vg Reverse current p f Vp Parameter ear wo J LLL LLLI O LL TEPER ANSE V VR Ern o L 1 3 2005 10 19 fi neon Package SCD80 BB659E6805 Package Outline 02 A 0 13005 Cathode marking _ _ 0 3 0 05 Foot Print Marking Layout Date code 2003 July 120 L OR GGg Type code BAR63 02W Laser marking Cathode marking Example Standard Packing Reel 2180 mm 3 000 Pieces Reel Reel 2180 mm 8 000 Pieces Reel 2 mm Pitch Reel 2330 mm 10 000 Pieces Reel Standard Reel with 2 mm Pitch A Cathode gt marking 4 2005 10 19 Infineon BB659E6805 Data Code marking for discrete packages with one digit SCD80 SC79 CES Code 01 a p A P 5
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lnfineon BB659E6805 Manual