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SIEMENS BB 639 Manual

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Contents

1. Semiconductor Group
2. SIEMENS Silicon Variable Capacitance Diode BB 639 e For tuning of extended frequency bands in VHF TV VTR tuners VPSOS1 TE Type Ordering Code Pin Configuration Marking Package tape and reel 1 2 BB 639 Q62702 B586 C A yellow S SOD 323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Vp 30 V Reverse voltage R 5 KQ Vom 35 V Forward current IF 20 mA Operating temperature range Tg 55 150 C Storage temperature range Li 55 150 C Thermal Resistance Junction ambient Rinsa lt 450 K W Semiconductor Group 1 10 94 SIEMENS BB 639 Electrical Characteristics at T 25 C unless otherwise specified Parameter Symbol Value min max Unit DC Characteristics Reverse current Va 30 V VA 30 V T 85 C Tp 200 nA Diode capacitance Va 1V f 1 MHz Va 28 V f 1 MHz Gi pF Capacitance ratio Va 1 V 28 V f 1 MHz CrlCre 13 5 14 7 Capacitance matching Va 1 V 28 V f 1 MHz AC C7 2 5 Series resistance Cy 12 pF f 100 MHz rs 0 65 Series inductance Ls nH Semiconductor Group SIEMENS BB 639 Diode capacitance C f Vp f 1 MHz 60 BB 639 EHD07048 Cr pF a 40 30 20

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