SIEMENS TLE 4262 Manual
Contents
1. SIEMENS TLE 4262 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min max Input Input voltage Vi 42 45 V Input current internally limited Reset Output Voltage Va 0 3 42 V Current In internally limited Reset Input Reset threshold Vae 0 3 6 V Reset Delay Voltage Ve 0 3 42 V Current Li internally limited Output Voltage Va 5 25 Vi V Current la internally limited Inhibit Voltage Ve 42 45 V Ground Current Teno 0 5 A Semiconductor Group 5 1998 11 01 SIEMENS TLE 4262 Absolute Maximum Ratings cont d Parameter Symbol Limit Values Unit Remarks min max Temperature Junction temperature T 150 Coe Storage temperature Toig 50 150 C Operating Range Input voltage Vi 5 2 45 V Junction temperature T 40 150 C Thermal resistance junction ambient Rin Ja 70 K W soldered junction case Rin sc 25 K W Corresponds with characteristics of drop voltage output current and power description see diagrams Semiconductor Group 6 1998 11 01 SIEMENS TLE 4262 Characteristics V 13 5 V T 25 C V gt 3 5 V unless specified otherwise Parameter Symbol Limit Values Unit Test2. Delay time tp 17 ms C4 100 nF Delay time t 2 us Cy 100 nF Inhibit Switch ON voltage Ve on 3 5 V IC turned on Switch OFF voltage Ve OFF 08 V IC turned off Input current JA 5 10 15 uA V 5V Note The reset output is low within the range Va 1 V to Var Semiconductor Group 8 1998 11 01 TLE 4262 SIEMENS PO 8 Output KL15 o 100 kQ Reset to MC 56 kQ AES01084 Application Circuit I 20 ET 1000 uF 470 nF I an TLE 4262G 56KQ lg O Vi V Va Vi VR e 1 gli Q Vor Vi Va SVR 201 Vi og AVa Below Regulating Range AES01082 Test Circuit 1998 11 01 Semiconductor Group 9 SIEMENS TLE 4262 t t 1 t t i Power on Reset Over Voltage Drop Undervoltage Secondary Load temperature at Input Spike Bounce AET01085 Time Response Semiconductor Group 10 1998 11 01 SIEMENS TLE 4262 G Charge Current versus Temperature AED01086 16 uA Id 14 40 0 40 80 120 C 160 Reset Switching Threshold versus Temperature AED01088 0 40 0 40 80 120 C 160 Semiconductor Group Switching Voltage Var and Vs versus Temperature AED01087 3 2 V V 28 Vi 135V 24 Var
3. Ved 1 6 1 2 0 8 Var 0 4 DE ee 0 40 0 40 80 120 C 160 J Current Consumption of Inhibit versus Temperature Output Current AED01089 12 LA I V 5V 0 40 0 40 80 120 C 160 11 1998 11 01 SIEMENS TLE 4262 G Output Voltage versus Temperature AED01090 5 2 V Va 51 50 OS Il 13 5 V 49 48 47 46 40 0 40 80 120 C 160 Input Response gt ED01092 10 0 10 20 30 40 us50 Semiconductor Group Output Current versus Input Voltage AED01091 300 I m T 25 C 0 10 20 30 40 V 50 gt V Load Response AED01093 Cq 22 uF 0 12 1998 11 01 SIEMENS TLE 4262 Drop Voltage versus Output Current AED01094 800 mV Vor 700 600 500 T 125 C 400 T 25 C 300 200 100 0 0 50 100 150 200 mA 300 IQ Current Consumption versus Input Voltage AED01096 30 mA RL 250 20 30 40 V 50 Semiconductor Group Current Consumption versus Output Current AED01095 0 50 100 150 200 mA 300 gt lo Output Voltage versus Input Vol
4. Condition min typ max Normal Operation Output voltage Va 49 5 00 5 10 V 5 mA lt fo lt 150 mA 6V lt V lt 28 V 40 C lt T lt 125 C Output voltage Vo 4 95 5 00 5 05 V 6V lt V lt 32V Ig 100 mA T gt 100 C Output current limiting Zo 200 250 mA Current consumption I 50 uA V lt 08 V h o I 720 KA Zo O mA I 10 15 MA Za 150 mA I 15 20 MA Jg 150 mA V 4 5 V Drop voltage Vor 0 35 0 6 V Tg 150 mA Load regulation AVa 25 mV Ja 5 MA to 150 mA Supply voltage AVa 15 25 mV V 6 V to 28 V regulation la 150 mA Ripple rejection SVR 54 dB f 100 Hz V 0 5 Vpp Reset Generator Switching threshold Var 42 45 48 Vae 0V Switching voltage Vae 1 28 1 35 1 42 Va gt 3 5 V Saturation voltage Va 0 10 0 40 Ir 1 mA Drop voltage V 2 4 5 V drop voltage Vi Va below regulating range Note The reset output is low within the range Vo 1 V to Var Semiconductor Group 7 1998 11 01 SIEMENS TLE 4262 Characteristics cont d Vi 13 5 V T 25 C V gt 3 5 V unless specified otherwise Parameter Symbol Limit Values Unit Test Condition min typ max Saturation voltage Vo 50 100 mV Vo lt Var Charge current Li 7 10 14 uA Delay switching Var 1 5 1 7 2 1 V threshold Switching threshold Ver 0 2 0 35 0 55 V
5. MA UES RAAN BRER ARAM BYRERT SIEMENS 5 V Low Drop Voltage Regulator TLE 4262 Bipolar IC Features e Output voltage tolerance lt 2 e Low drop voltage e Very low standby current consumption e Overtemperature protection e Reverse polarity protection Short circuit proof e Settable reset threshold P DSO 20 6 e Wide temperature range e Suitable for use in automotive electronics Type Ordering Code Package TLE 4262 G Q67006 A9068 P DSO 20 6 SMD TLE 4262 GM Q67006 A9356 P DSO 14 4 SMD V New type P DSO 14 4 Functional Description TLE 4262 G is a 5 V low drop voltage regulator in a P DSO 20 6 SMD package The maximum input voltage is 45 V The maximum output current is more than 200 mA The IC is short circuit proof and incorporates temperature protection that disables the IC at overtemperature The IC regulates an input voltage V in the range of 6 V lt V lt 45 V to Varated 5 0 V reset signal is generated for an output voltage of Va lt 4 5 V This voltage threshold can be decreased to 3 5 V by external connection The reset delay can be set externally with a capacitor The IC can be switched off via the inhibit input which causes the current consumption to drop from 720 uA to lt 50 uA Semiconductor Group 1 1998 11 01 SIEMENS TLE 4262 Dimensioning Information on External Components The input capacitor C is ne
6. cessary for compensating line influences Using a resistor of approx 1 Qin series with C the oscillating circuit consisting of input inductivity and input capacitance can be damped The output capacitor is necessary for the stability of the regulating circuit Stability is guaranteed at values gt 22 uF and an ESR of lt 3 Q within the operating temperature range For small tolerances of the reset delay the spread of the capacitance of the dalay capacitor and its temperature coefficient should be noted Pin Configuration top view TLE 4262 G TLE 4262 GM INH QRES GND GND GND DRES SRES AEP02588 AEP01083 Semiconductor Group 2 1998 11 01 SIEMENS TLE 4262 Pin Definitions and Functions Pin Symbol Function 1 INH Inhibit TTL compatible low active input 2 QRES Reset output open collector output internally connected to the output via a resistor of 30 kQ 4 7 14 17 GND Ground 9 DRES Reset delay connected to ground by a capacitor 10 SRES Reset threshold for setting the switching threshold connect by a voltage divider from output to ground If this input is connected to GND reset is triggered at an output voltage of 4 5 V 11 Vo 5 V output voltage block to ground by a 22 uF capacitor 20 Vi Input voltage block to ground directly at the IC by a ceramic capacitor 3 8 12 N C Not connected 13 18 19 Semiconduct
7. or Group 3 1998 11 01 SIEMENS TLE 4262 Circuit Description The control amplifier compares a reference voltage which is kept highly accurate by resistance adjustment to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer Saturation control as a function of the load current prevents any over saturation of the power element If the externally scaled down output voltage at the reset threshold input drops below 1 35 V the external reset delay capacitor is discharged by the reset generator If the voltage on the capacitor reaches the lower threshold Vs a reset signal is issued on the reset output and not cancelled again until the upper threshold Vir is exceeded If the reset threshold input is connected to GND reset is triggered at an output voltage of 4 5 V The IC can be switched at the TTL compatible low active inhibit input It also incorporates a number of internal circuits for protection against e Overload e Overtemperature e Reverse polarity Temperature Saturation Sensor Control and Protection Circuit Input Output Control PI RESET Delay i RESET RESET i Generator Output RESET Threshold Adjustment INHIBIT GND AEBO1081 Block Diagram Semiconductor Group 4 1998 11 01
8. tage AED01097 R 250 0 2 4 6 8 V 10 13 1998 11 01 SIEMENS TLE 4262 Package Outlines P DSO 20 6 Plastic Dual Small Outline 0 35 x 45 a 8 SE 76 02 LIS me if ci 1 27 20153 0 35 ll ze Ti 20 11 Q GPS05094 1 12 8 95 10 M Index Marking 1 Does not include plastic or metal protrusions of 0 15 max per side 2 Does not include dambar protrusion of 0 05 max per side Weight approx 0 6 g Sorts of Packing Package outlines for tubes trays etc are contained in our Data Book Package Information SMD Surface Mounted Device Dimensions in mm Semiconductor Group 14 1998 11 01 TLE 4262 SIEMENS P DSO 14 4 Plastic Dual Small Outline 0 35 x 45 a S zE NSR ol r Ir 5 E vo Index Marking 1 Does not include plastic or metal protrusion of 0 15 max per side 2 Does not include dambar protrusion of 0 05 max per side GPS05093 Sorts of Packing Package outlines for tubes trays etc are contained in our Data Book Package Information SMD Surface Mounted Device Dimensions in mm 15 1998 11 01 Semiconductor Group
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SIEMENS TLE 4262 Manual