SIEMENS BB 835 Silicon Tuning Diode handbook
Contents
1. EHDO7170 10 Co pF 8 7 6 5 Semiconductor Group 22. SIEMENS Silicon Tuning Diode Preliminary data Features e Extended frequency range up to 2 8 Ghz special design for use in TV sat indoor units e High capacitance ratio BB 835 VPSOS1TE Type Marking Ordering Code Pin Configuration Package tape and reel 2 BB 835 yellow X Q62702 B802 A SOD 323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V Reverse voltage R25kKQ Vem 35 V Forward current I 20 mA Operating temperature range Top 55 150 C Storage temperature range Tog 55 150 C Thermal Resistance Junction ambient Rise lt 450 K W D For detailed informatioon see chapter Package Outline Semiconductor Group 1 04 96 SIEMENS BB 633 Electrical Characteristics at T 25 C unless otherwise specified Parameter Symbol Value Unit min typ max DC Characteristics Reverse current Ig nA Vk 30 V 10 Va 30 V Ta 85 C 200 Diode capacitance C pF Vk 1 V f 1 MHz 8 5 9 1 10 Va 28 V f 1 MHz 0 5 0 62 10 75 Capacitance ratio CG es Vk 1 V 28 V f 1 MHz 13 5 114 7 Capacitance matching ACC Vk 1 28 V f 1MHz 3 Series resistance re Q Va 1V f 470 MHz 2 4 Series inductance Ls 1 4 nH Diode capacitance C f Vp f 1 MHz BB 835
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SIEMENS BB 835 Silicon Tuning Diode handbook