lnfineon BTS 7970B Manual
Contents
1. 0 0 0 c cee 16 1 3 6 Electrical Characteristics Protection Functions 17 1 4 Control and Diagnostics assas cece eee 18 1 4 9 Inp t Circuit ioo RR take eka toa aed babens 18 1 4 2 Dead Time Generation 0 0 c eee eee 18 1 4 8 Adjustable Slew Rate 0 cee ects 18 1 4 4 Status Flag Diagnosis With Current Sense Capability 18 1 4 5 Truth Table iicciiicheie did ie REI Pe ERR edie a EE EE a 20 1 4 6 Electrical Characteristics Control and Diagnostics 21 2 Thermal Characteristics 0 0 0 0 cece tees 22 3 Application ccc ete ristir epera eae rS eee aen 4 oe 23 3 1 Application Example 2 2 ges m erated ee EN aba Yard eee 23 3 2 Layout Considerations llle 23 4 Package Outlines P TO 263 7 uslusssesseeelee eres 24 5 Revision HIStory VERRE tee Ne et GNI Ve ES pe tee taque 25 Data Sheet 1 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B Novalithic Product Summary The BTS 7970B is a fully integrated high current half bridge for motor drive applications It is part of the NovalithIC family containing one p channel highside MOSFET and one n channel lowside MOSFET with an integrated driver IC in one package Due to the p channel highside switch the need for a charge pump is eliminated thus minimizing EMI Interfacing to a microcontroller is made easy by the integrated driver IC which features2. Data Sheet 22 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Application 6 Application 6 1 Application Example Microcontroller Voltage Regulator Reverse Polarity Protection uC i A TLE n o ese V Vdd C 4 Q 4278G 4 s D GND SPD O 1 0 VO VO VO Vss 1 50P03L BTS 7970B BTS 79708 EYS vs 4 INH INH lL IN n IN IS I OUT OUT IS de L SR i i SR GND I GND High Current H Bridge Figure 14 Application Example H Bridge with two BTS 7970B 6 2 Layout Considerations Due to the fast switching times for high currents special care has to be taken to the PCB layout Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges The BTS 7970B has no separate pin for power ground and logic ground Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor the current sense resistor and ground pin of th
3. Pin Configuration 2 Pin Configuration 2 1 Pin Assignment BTS 7970B P TO 263 7 8 1534567 Figure 3 Pin Assignment BTS 7970B and top view 2 2 Pin Definitions and Functions Pin Symbol I O Function 1 GND Ground 2 IN l Input Defines whether high or lowside switch is activated 3 INH Inhibit When set to low device goes in sleep mode 4 8 OUT o Power output of the bridge SR l Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND 6 IS O Current Sense and Diagnosis 7 VS Supply Bold type Pin needs power wiring Data Sheet 5 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Maximum Ratings 3 Maximum Ratings 40 C lt T lt 150 C unless otherwise specified Pos Parameter Symbol Limits Unit Test Condition min max Electrical Maximum Ratings 3 0 1 Supply voltage Vys 0 3 45 V 3 0 2 Logic Input Voltage Vin 0 3 15 3 V ViNH 3 0 3 HS LS continuous drain Ips 44 440 A To lt 85 C current Ipus switch active 3 0 4 HS pulsed drain current pqs 90 90 A Tc lt 85 C toulse 10ms 3 0 5 LS pulsed drain current pus 90 907 A Single pulse 3 0 6 PWM current Tout 55 55 JA f 1kHz DC 50 60 60 A f 20kHz DC 50 3 0 7 Voltage at SR pin Van 0 3 1 0 IV 3 0 8 Voltage between VS
4. 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics 4 2 2 Switching Times 90 10 Figure 7 Definition of switching times high side Rjg44 to GND Lars frs lt gt 90 Figure 8 Definition of switching times low side Rigag to VS Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse It can be calculated using the following formulas e Aths fanus 0 5 fus faHs 0 5 fius Atis fairs 0 5 fiis fars 0 5 frs Data Sheet 11 Rev 2 0 2006 05 09 Cinfineon 4 2 3 High Current PN Half Bridge BTS 7970B Power Stages Dynamic Characteristics Block Description and Characteristics 40 C lt Tj lt 150 C Vg 13 5 V Rioag 2Q unless otherwise specified Pos Parameter Symbol Limit Values min typ max Unit Test Conditions High Side Switch Dynamic Characteristics 4 2 7 Rise time of HS frs us 0 5 1 1 5 Rgn20 Q 2 Rag 5 1 KQ 2 6 11 Rgp 51 KQ 4 2 8 Slew rate HS on AVout V us 6 Rsp 5 1 KQ 16 Rgg 51 KQ 4 2 9 Switch on delay time tarHs us HS 1 7 3 1 4 3 Rgn20 Q 44 Rsp 5 1 KQ 5 6 14 22 4 Rgp 51 kQ 4 2 10
5. Fall time of HS i HS us 0 5 1 1 5 Rggn 2040 2 Rgg 5 1 KQ 2 6 11 Rgp 51 kQ 4 2 11 Slew rate HS off AVouT V us 6 Rgp 5 1 KQ 16 Rsp 51 KQ 4 2 12 Switch off delay time faris Hs HS 1 2 24 3 2 Rgn20 Q 34 Rsp 5 1 KQ 4 10 16 Rgp 51 kQ Data Sheet 12 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B Block Description and Characteristics 40 C lt Tj lt 150 C Vg 13 5 V Rioag 2Q unless otherwise specified Pos Parameter Symbol Limit Values Unit Test Conditions min typ max Low Side Switch Dynamic Characteristics 4 2 13 Rise time of LS fis us 0 5 1 1 5 Rgn20 Q 2 Rgp 5 1 KQ 2 6 11 Rgp 51 kQ 4 2 14 Slew rate LS switch off AVour V us 6 B Rsp 5 1 KQ 16 Rgg 51 KQ 4 2 15 Switch off delay time tas Hs LS 0 6 1 3 1 9 Rgn20 Q 22 Rgg 5 1 KQ 2 6 7 11 Rgp 51 kQ 4 2 16 Fall time of LS Its us 0 5 1 1 5 Rgn20 Q 2 Rgg 5 1 KQ 2 6 11 Rgp 51 kQ 4 2 17 Slew rate LS switch on A Vout V us f Ls 11 Rsp 0Q 6 Rgp 5 1 KQ 16 Rgg 51 KQ 4 2 18 Switch on delay time tars us LS 2 3 3 6 50 Rsp 0Q 5 6 Rgp 8 1 KQ 6 4 16 25 4 Rgp 51 KQ Data Sheet 13 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics 4 3 Protection Functions T
6. Switch 25 25 Figure 6 Typical On State Resistance vs Supply Voltage Data Sheet 9 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B Block Description and Characteristics 4 2 1 Power Stages Static Characteristics 40 C lt Tj lt 150 C 8 V lt Vs lt 18 V unless otherwise specified Pos Parameter Symbol Limit Values Unit Test Conditions min typ max High Side Switch Static Characteristics 4 2 1 On state high side Ronis mQ Tout 20A resistance Vg 13 5 V 7 9 T 25 C 10 12 5 Tj 150 C 4 2 2 Leakage current high 7 LkHs 1 pA Vinny 20 V side Vout 0V Tj lt 85 C 50 yA VINH 0V Vout 0 V Tj 150 C 4 2 3 Reverse diode Vps us V Tout 9A forward voltage high 0 9 1 5 Tj 40 C side 08 14 T 25 C 0 6 0 8 Tj 150 C Low Side Switch Static Characteristics 4 2 4 On state low side Ronis mQ Tout 20A resistance Vg 13 5V 9 12 T 25 C 14 18 Tj 150 C 4 2 5 Leakage currentlow Ji kis 1 pA Vink 20V side Vour Vg Tj lt 85 C 15 pA VINH 0V Vout Vs Tj 150 C 4 2 6 Reverse diode Vsp Ls V Tout 9A forward voltage low 0 9 1 5 Tj 40 C side 08 11 T 25 C 0 6 0 8 Tj 150 C 1 Due to active freewheeling diode is conducting only for a few ps depending on Rsp Data Sheet 10 Rev 2 0
7. and Vys Vis 0 3 45 V IS pin 3 0 9 Voltage at IS pin Vis 20 45 V Thermal Maximum Ratings 3 0 10 Junction temperature Ti 40 150 C 3 0 11 Storage temperature T stg 55 150 C ESD Susceptibility 3 0 12 ESD susceptibility Vesp kv HBM IN INH SR IS 2 2 OUT GND VS 6 6 1 Maximum reachable current may be smaller depending on current limitation level 2 ESD susceptibility HBM according to EIA JESD 22 A 114B Note Maximum ratings are absolute ratings exceeding any one of these values may cause irreversible damage to the device Exposure to maximum rating conditions for extended periods of time may affect device reliability Data Sheet 6 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Maximum Ratings Maximum Single Pulse Current 100 I max A 0 i 1 0E 03 1 0E 02 1 0E 01 1 0E 00 1 0E 01 t pulsel 5 Figure 4 BTS 7970B Maximum Single Pulse Current This diagram shows the maximum single pulse current that can be driven for a given pulse time foulge The maximum reachable current may be smaller depending on the current limitation level Pulse time may be limited due to thermal protection of the device Data Sheet 7 Rev 2 0 2006 05 09 Cinfineon 4 4 1 High Current PN Half Bridge BTS 7970B Block Description and Characteristi
8. logic level inputs diagnosis with current sense slew rate adjustment dead time generation and protection against overtemperature overvoltage undervoltage overcurrent and short circuit The BTS 7970B provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption BTS 7970B P TO 263 7 Basic Features e Path resistance of typ 16 mQ 25 C e Low quiescent current of typ 7 HA 25 C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 68 A typ 50 A min e Status flag diagnosis with current sense capability e Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Type Package BTS 7970B P TO 263 7 Data Sheet 2 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B 1 Overview Overview The BTS 7970B is part of the NovalithIC family containing three separate chips in one package One p channel highside MOSFET and one n channel lowside MOSFET together with a driver IC forming a fully integrated high current half bridge All three chips are mounted on one common leadframe using the chip on chip and chip by chip technology The power switches utilize vertical MOS technolo
9. to thresholds and reaction delay times of the filter circuitry the effective current limitation level Ic depends on the slew rate of the load current d dt as shown in Figure 10 tc LS lt gt Figure 9 Timing Diagram Current Limitation Inductive Load High Side Switch Low SideSwitch 90 85 80 CLHO T 40 C L IT 25 C 75 i 70 len Al lc A 65 0 500 1000 1500 2000 0 500 1000 1500 2000 X di dt Ams di dt A ms Figure 10 Current Limitation Level vs Current Slew Rate dl dt Data Sheet 15 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics High Side Switch Low Side Switch Figure 11 Typical Current Limitation Detection Levels vs Supply Voltage In combination with a typical inductive load such as a motor this results in a switched mode current limitation That way of limiting the current has the advantage that the power dissipation in the BTS 7970B is much smaller than by driving the MOSFETS in linear mode Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature e g for limiting the inrush current during motor start up However the regular use of the current limitation is allowed only as long as the specified maximum junction te
10. voltage UV X X OFF OFF 0 UV lockout Overtemperature OT O X OFF OFF O Stand by mode reset of latch 1 X OFF OFF 1 Shut down with latch error detected Current limitation 1 1 OFF JON 1 Switched mode error detected 1 0 ON OFF 1 Switched mode error detected 1 Will return to normal operation after tci s Error signal is reset after 2 tc s see Chapter 4 3 4 Inputs Switches Status Flag IS 0 Logic LOW OFF switched off CS Current sense mode 1 2 Logic HIGH ON switched on 1 2 Logic HIGH error X Oor1 Data Sheet 20 Rev 2 0 2006 05 09 Cinfineon 4 4 6 High Current PN Half Bridge BTS 7970B Block Description and Characteristics Electrical Characteristics Control and Diagnostics 40 C lt Tj lt 150 C 8 V lt Vs lt 18 V unless otherwise specified Pos Parameter Symbol Limit Values Unit Test Conditions min typ max Control Inputs IN and INH 4 4 1 High level voltage ViNH H 1 75 2 15 V INH IN ViN H 1 6 2 4 4 2 Low level voltage ViNH L 1 1 1 4 M INH IN ViN L 4 4 3 Input voltage ViNHHY 350 mV hysteresis ViNHY Es 200 4 4 4 Input current TiNH H 30 150 pA Vin Viny 5 3 V TINH 4 4 5 Input current IiNH L 25 125 UA Vin Viny 0 4 V INu Current Sense 4 4 6 Current sense ratio in kj is 10 Rig 1kQ static on condition 13 19 5 25
11. 1 240A kius 7 4 lis 12 19 5 26 1 220A 10 19 5 28 14 210A 4 4 7 Maximum analog lis lim 4 5 6 5 mA Vg 13 5 V sense current sense Rig 1kQ current in fault condition 4 4 8 Isense leakage current Jig 1 pA Vin 0 V or Vinn 0 V 4 4 9 lsense leakage current Jisp 1 200 A Vin Vinn 5V active high side switch I 0A 4 4 10 Current sense ratio dks 1 5 1 5 Q100 qualification long term drift 4 4 11 Current sense ratio dkyjs 0 12 0 025 0 06 K 2 10A 4 4712 temperature dT 0 055 0 025 0 005 l 20A coefficient 4 4 13 0 05 0 025 0 l 40A 1 Not subject to production test specified by design Data Sheet 21 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Thermal Characteristics 5 Thermal Characteristics Pos Parameter Symbol Limits Unit Test Condition min max 5 0 1 Thermal Resistance Rmus 1 8 KAW Junction Case Low Side Switch Rtpjc s ATjt sy Pues 5 0 2 Thermal Resistance Rmus 0 9 KW Junction Case High Side Switch Rthjc Hs ATHs Pus 5 0 3 Thermal Resistance Rinic 1 0 KW Junction Case both Switches Rinic max ATis ATi syl PHs Pus 5 0 4 Thermal Resistance Rihja 35 K W 6cm cooling Junction Ambient area Note Thermal characteristics are not subject to production test specified by design
12. DAES RAAN BER ARAN MVR BIS 7970B High Current PN Half Bridge NovalithlC 68 A 7 MQ 9 MQ typ Cinfineon thinking e e High Current PN Half Bridge Cinfineon BTS 7970B Product Summary 222300000 Fork edensedengogadateeeneidse ater Meee Ge iea 2 Basic Features 22e eae duane fides hyo eed yeah E LEV E RETE Ree rs 2 T Overview oi E hee de ede de PORE RR Ret tels ao at 3 1 1 Block Diagram uod RE aie a heed dhe a ena eee epee eed 3 DNI MERETUR 4 2 Pin Configuration slslsssesssesee eR n 5 2 1 Pin Assignment leer eec Re E EE Rca E CUR ed 5 2 2 Pin Definitions and Functions 0 00 e eee e 5 3 Maximum RatingS omo ID RI a dave dine 3r woe I ESDRIA ES 6 Maximum Single Pulse Current 0 0 0 0 eee eee 7 1 Block Description and Characteristics 00 0 e eee eee 8 1 1 Supply Characteristics 2 0 eee es 8 1 2 PowerStages sseeeeeeeeeeee hn 9 1 2 1 Power Stages Static Characteristics 0 0 0 c eee eee 10 1 2 2 Switching Times 0 cece ne 11 1 2 8 Power Stages Dynamic Characteristics 000 000 12 1 3 Protection F nctloris adole dita buses teeta ia RE S Ba 14 1 3 1 Overvoltage Lock Out 0 eee 14 1 3 2 Undervoltage Shut Down 0 cece 14 1 3 8 Overtemperature Protection 0 0 c eects 14 1 8 4 Current Limitation 0 0 ccc eh 14 1 3 5 Short Circuit Protection
13. In case of a fault condition the status output is connected to a current source which is independent of the load current and provides J syjim The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage In case of current limitation the J giim is activated for 2 tci s Data Sheet 18 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics Normal Operation Fault Condition Current Sense Mode Error Flag Mode VS VS m ESD ZD Da I IS IS Ns hoa T7 Bi bh Dp Sense 7 Sense i gt Output Ris is gt Output Ris IS im Logic IS im Logic Figure 12 Sense Current and Fault Current A lis mA IS lim Current Sense Mode T Error Flag Mode lou letu l A Figure 13 Sense Current vs Load Current Data Sheet 19 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B Block Description and Characteristics 4 4 5 Truth Table Device State Inputs Outputs Mode INH IN HSS LSS IS Normal operation 0 X OFF OFF O Stand by mode 1 0 OFF JON 0 LSS active 1 1 ON OFF CS HSS active Over voltage OV X X ON OFF Shut down of LSS HSS activated error detected Under
14. Infineon Technologies Office Infineon Technologies Components may only be used in life support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Data Sheet 26 2006 05 09
15. cs Supply Characteristics Block Description and Characteristics 40 C lt Tj lt 150 C 8 V lt Vs lt 18 V J OA unless otherwise specified Pos Parameter Symbol Limit Values Unit Test Conditions min typ max General 4 1 1 Operating Voltage Vs 5 5 28 V Vg increasing 4 1 2 Supply Current Iys on 2 3 mA Vinny 5V Vn OVor5V Rgp 0 Q DC mode normal operation no fault condition 4 1 3 Quiescent Current Lyscott 7 15 UA VINH 0V Vn 0Vor5V T lt 85 C B 65 pA Ving 20 V VN 20Vor5V T 2 gt T C Figure 5 Quiescent Current typ vs Junction Temperature Data Sheet 8 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics 4 2 Power Stages The power stages of the BTS 7970B consist of a p channel vertical DMOS transistor for the high side switch and a n channel vertical DMOS transistor for the low side switch All protection and diagnostic functions are located in a separate top chip Both switches can be operated up to 25 kHz allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes The on state resistance Roy is dependent on the supply voltage Vs as well as on the junction temperature Ti The typical on state resistance characteristics are shown in Figure 6 High Side Switch Low Side
16. e device GND pin 1 is minimized If the BTS 7970B is used in a H bridge or B6 bridge design the voltage offset between the GND pins of the different devices should be small as well A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce A reasonable value for this capacitor would be about 470 nF The digital inputs need to be protected from excess currents e g caused by induced voltage spikes by series resistors in the range of 10 kQ Data Sheet 23 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Package Outlines P TO 263 7 7 Package Outlines P TO 263 7 P TO 263 7 Plastic Transistor Single Outline Package 4 4 9 9 1 340 A 0 02 7 5 6 6 Br 212p d I o a 1 gt QF a QI 3 0 4 Sto IY yy e eo TN 1 7T 0 0 15 t foal 7x 0 6704 1Q 5 0 15 0 03 8 Mari 6 x 1 27 X 3 0 1B 60 25 AB 1 Shear and punch direction no burrs this surface Back side heatsink contour All metal sufaces tin plated except area of cut Footprint 10 8 iD HLGF 1019 You can find all of our packages sorts of packing and others in our Infineon Internet Page Products http www infineon com produc
17. etection level high 54 76 98 Tj 40 C side a 73 T 25 C 50 70 90 Tj 150 C 4 3 8 Current limitation Icio A Vg 13 5V detection level low 54 71 90 Tj 40 C side 68 Tj 25 C 50 65 82 Tj 150 C Current Limitation Timing 4 3 9 Shut off time for HS tcis 70 115 210 ys Vg 13 5V and LS Thermal Shut Down 4 3 10 Thermal shut down Tisp 155 175 200 C junction temperature 4 3 11 Thermal switch on Tiso 150 190 C junction temperature 4 3 12 Thermal hysteresis AT 7 K 4 3 13 Reset pulse at INH pin treset 4 E pus E INH low Data Sheet 17 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics 4 4 Control and Diagnostics 4 4 1 Input Circuit The control inputs IN and INH consist of TTL CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs Setting the INH pin to high enables the device In this condition one of the two power switches is switched on depending on the status of the IN pin To deactivate both switches the INH pin has to be set to low No external driver is needed The BTS 7970B can be interfaced directly to a microcontroller 4 4 2 Dead Time Generation In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time connecting directly the battery voltage to GND This is assured by a circuit i
18. gies to ensure optimum on state resistance Due to the p channel highside switch the need for a charge pump is eliminated thus minimizing EMI Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs diagnosis with current sense slew rate adjustment dead time generation and protection against overtemperature overvoltage undervoltage overcurrent and short circuit The BTS 7970B can be combined with other BTS 7970B to form H bridge and 3 phase drive configurations 1 1 Block Diagram BTS 7970B HS base chip il Top chip VS Gate Driver IN Dead Time Gen Slew Rate Adj INH UV Shut Down OV Lock Out SR OT Shut Down Current Lim Diagnosis IS Current Sense JOUT TFT LS base chip GND Figure 1 Block Diagram Data Sheet Rev 2 0 2006 05 09 om e High Current PN Half Bridge Qinfineon BTS 79708 Overview 1 2 Terms Following figure shows the terms used in this data sheet A Ws Vs m lus Vsus In VS IN V IN ting Vus BTS 7970B ow OUT GND Ip s Figure 2 Terms Data Sheet 4 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B
19. he device provides integrated protection functions These are designed to prevent IC destruction under fault conditions described in the data sheet Fault conditions are considered as outside normal operating range Protection functions are not to be used for continuous or repetitive operation with the exception of the current limitation Chapter 4 3 4 In a fault condition the BTS 7970B will apply the highest slew rate possible independent of the connected slew rate resistor Overvoltage overtemperature and overcurrent are indicated by a fault current lis jy at the IS pin as described in the paragraph Status Flag Diagnosis With Current Sense Capability on Page 18 and Figure 12 In the following the protection functions are listed in order of their priority Overvoltage lock out overrides all other error modes 4 3 1 Overvoltage Lock Out To assure a high immunity against overvoltages e g load dump conditions the device shuts the lowside MOSFET off and turns the highside MOSFET on if the supply voltage is exceeding the over voltage protection level Voy orr The IC operates in normal mode again with a hysteresis Voy y if the supply voltage decreases below the switch on voltage Voy ow In H bridge configuration this behavior of the BTS 7970B will lead to freewheeling in highside during over voltage 4 3 2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off output is tr
20. i state if the supply voltage drops below the switch off voltage Vyy orr The IC becomes active again with a hysteresis VyyHy if the supply voltage rises above the switch on voltage Vuv on 4 3 3 Overtemperature Protection The BTS 7970B is protected against overtemperature by an integrated temperature sensor Overtemperature leads to a shut down of both output stages This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin provided that its temperature has decreased at least the thermal hysteresis AT in the meantime Repetitive use of the overtemperature protection might reduce lifetime 4 3 4 Current Limitation The current in the bridge is measured in both switches As soon as the current in forward direction in one switch high side or low side is reaching the limit 7c y this switch is deactivated and the other switch is activated for tc s During that time all changes at the Data Sheet 14 Rev 2 0 2006 05 09 e e High Current PN Half Bridge Cinfineon BTS 7970B Block Description and Characteristics IN pin are ignored However the INH pin can still be used to switch both MOSFETs off After fc s the switches return to their initial setting The error signal at the IS pin is reset after 2 fc s Unintentional triggering of the current limitation by short current spikes e g inflicted by EMI coming from the motor is suppressed by internal filter circuitry Due
21. mperature is not exceeded Exceeding this temperature can reduce the lifetime of the device 4 3 5 Short Circuit Protection The device is short circuit protected against output short circuit to ground output short circuit to supply voltage short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the over temperature shut down of the device Please note Due to the higher priority of the overvoltage protection the short circuit protection is inactive in overvoltage conditions Data Sheet 16 Rev 2 0 2006 05 09 Cinfineon 4 3 6 40 C lt Tj lt 150 C 8 V lt Vs lt 18 V unless otherwise specified High Current PN Half Bridge BTS 7970B Block Description and Characteristics Electrical Characteristics Protection Functions Pos Parameter Symbol Limit Values Unit Test Conditions min typ max Under Voltage Shut Down 4 8 1 Switch ON voltage Vuv oN 5 5 V Vg increasing 4 3 2 Switch OFF voltage Vuv orF 4 0 5 4 V Vg decreasing 4 3 3 ON OFF hysteresis Vyv HY 0 2 V Over Voltage Lock Out 4 3 4 Switch ON voltage Vov on 27 8 M Vg decreasing 4 3 5 Switch OFF voltage Voworr 28 30 V Vg increasing 4 3 6 ON OFF hysteresis Voy uv 0 2 V Current Limitation 4 3 7 Current limitation IcLHo A Vs 13 5 V d
22. n the driver IC generating a so called dead time between switching off one MOSFET and switching on the other The dead time generated in the driver IC is automatically adjusted to the selected slew rate 4 4 3 Adjustable Slew Rate In order to optimize electromagnetic emission the switching speed of the MOSFETs is adjustable by an external resistor The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor Rsp to GND 4 4 4 Status Flag Diagnosis With Current Sense Capability The status pin IS is used as a combined current sense and error flag output In normal operation current sense mode a current source is connected to the status pin which delivers a current proportional to the forward load current flowing through the active high side switch If the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal leakage current Jisk The external resistor Rig determines the voltage per output current E g with the nominal value of 19500 for the current sense ratio Kj is J Iis a resistor value of Rig 1kQ leads to Vig I 19 5 A V Due to the good long term stability and the low temperature coefficient it is possible to improve the absolute current sense accuracy in the application by calibration For best results it is recommended to do a two point calibration
23. ts SMD Surface Mounted Device Dimensions in mm Data Sheet 24 Rev 2 0 2006 05 09 Cinfineon High Current PN Half Bridge BTS 7970B 8 Revision History Revision History Version Date Changes Comments Rev 0 1 2005 07 20 Target Data Sheet Rev 1 0 2006 05 04 Preliminary Data Sheet Rev 2 0 2006 05 09 Data Sheet Data Sheet 25 2006 05 09 e P e High Current PN Half Bridge Infineon BTS 7970B Edition 2006 05 09 Published by Infineon Technologies AG 81726 M nchen Germany Infineon Technologies AG 5 8 06 All Rights Reserved Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics Beschaffenheitsgarantie With respect to any examples or hints given herein any typical values stated herein and or any information regarding the application of the device Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties of non infringement of intellectual property rights of any third party Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office www infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest
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lnfineon BTS 7970B Manual