lnfineon BTS 7750 GP Manual
Contents
1. Igy LK ler gt Diagnosis 3r Lv IH1 v Gate STL Driver Vsrz lin 1H2 v Gate in Driver GND V Vinz UVON M o Tenn Vuvorr hko Protection 14 IL1 Gate T Driver Protection l Vas H iu i Gate Driver V th 1 Vu 3 4 15 Vost VosL2 Vi th 2 SL1 SL2 Vua Va vy Isce L1 Iscp L2 M T T Y sa Ys T T T ed Figure 3 Test Circuit HS Source Current Named during Short Named during Leakage Circuit Cond sni2 Iscp H Ip LK Data Sheet 13 2001 02 01 BTS 7750 GP technologies Watchdog Reset e 9 Q Ra Ca 100 kQ 22uF WDR Vee Rs Le 10 KQ Diagnosis Biasing and Protection 1H1 7 Ls Gate Driver SH2 IH2 10 n Gate Bi Driver DL2 Lael AN Ln uP M SH1 J DL1 Protection IL1 1 Gate Driver Protection IL2 13 GND SL1 SL2 In case of V lt2. Parameter Symbol Limit Values Unit Test Condition min typ max Switching times of lowside switch Turn ON time 70 to 50 ton x 70 170 uS Rigag 12 Q Vs 0 to 10V Vs 12V Turn OFF time torr 40 150 us Road 12 2 to 10 Va Vs 12V Slew rate on 70 to 50 Vu dV dton 1 0 V us Rtoag 12 Q V 0 to 10 V Vs 12V Slew rate off 50 to 70 Va dV dtorr 1 0 V us Rigag 12 Q V 0 to 10 V Vs 12V Note switching times are guaranteed by design Control Inputs of highside switches GH 1 2 H input voltage Vinnig 25 IV L input voltage Vin Low 1 V Input voltage hysterese Vu wy 0 3 V H input current Tih High 15 30 60 uA Vy 5V L input current Lilou 5 20 uA Vy 0 4V Input series resistance R 27 4 5 5 kQ Zener limit voltage Vuz 54 V 14 1 6 mA Control Inputs GL1 2 Gate threshold voltage Vie th 0 9 1 7 2 2 V ly 2mA Note The listed characteristics are ensured over the operating range of the integrated circuit Typical characteristics specify mean values expected over the production spread If not otherwise specified typical characteristics apply at T 25 C and the given supply voltage Data Sheet 2001 02 01 BTS 7750 GP technologies
3. DAFT ar SNE RMA SERES Infineon technologies TrilithlC BTS 7750 GP Data Sheet 1 Overview 1 1 Features Quad D MOS switch driver Free configurable as bridge or quad switch Optimized for DC motor management applications e Low Rps ow 70 MQ high side switch 45 mQ low side switch typical values 25 C P TO263 15 1 e Maximum peak current typ 12 A 25 C e Very low quiescent current typ 5 uA 25 C e Small outline thermal optimized PowerPak Full short circuit protection Operates up to 40 V e Status flag diagnosis Overtemperature shut down with hysteresis nternal clamp diodes solated sources for external current sensing Under voltage detection with hysteresis PWM frequencies up to 1 kHz Type Ordering Code Package BTS 7750 GP Q67006 A9402 P TO263 15 1 1 2 Description The BTS 7750 GP is part of the TrilithIC family containing three dies in one package One double high side switch and two low side switches The drains of these three vertical DMOS chips are mounted on separated leadframes The sources are connected to individual pins so the BTS 7750 GP can be used in H bridge as well as in any other configuration Both the double high side and the two low side switches of the BTS 7750 GP are manufactured in SMART SIPMOS technology which combines low Ros on Vertical DMOS power stages with CMOS control circuitry The high side switch is
4. Data Sheet 10 2001 02 01 Infineon technologies 3 3 Electrical Characteristics cont d Isu Igy lg l 0 A 40 C T 150 G 8 V lt Vs lt 18 V BTS 7750 GP unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min typ max Thermal Shutdown Thermal shutdown junction 7 sp 155 180 190 C temperature Thermal switch on junction T so 150 170 1180 C temperature Temperature hysteresis AT 10 C AT Tiso Tiso Status Flag Output ST of highside switch Low output voltage Var 02 10 6 V Is 1 6 mA Leakage current Teri 10 uA V 5V Zener limit voltage Vaiz 54 V Ist 1 6 mA Switching times of highside switch Turn ON time ton 85 180 ius Rioad 12 Q to 90 Va Vs 12V Turn OFF time torr 80 180 lus RLoad 12 Q to 10 Va Vs 12V Slewrateon 10to 30 Va dV dton 1 1 V us RLoad 12 Q Vs 12V Slew rate off 70 to 40 Va dV 1 5 V us RLoad 12 Q dtorr Vs 12V Note switching times are guaranteed by design Data Sheet 11 2001 02 01 Infineon technologies BTS 7750 GP 3 3 Electrical Characteristics cont d Ism Isr si 112 O A 40 C lt T lt 150 C 8 V lt Vs lt 18V unless otherwise specified
5. 0 6V or reverse battery the current into the pC might be limited by external resitors to protect the pC Figure 4 Application Circuit Data Sheet 14 2001 02 01 BTS 7750 GP technologies 4 Package Outlines P TO263 15 1 Plastic Transistor Single Outline Package 21 6402 1 02 83 a M 5 56 0 15 8 18 0 15 i 1 Typical a All metal surfaces tin plated except area of cut ip GPT09151 m oO Sorts of Packing Package outlines for tubes trays etc are contained in our Data Book Package Information SMD Surface Mounted Device Dimensions in mm Data Sheet 15 2001 02 01 BTS 7750 GP technologies Published by Infineon Technologies AG i Gr Bereichs Kommunikation St Martin Strasse 53 D 81541 M nchen Infineon Technologies AG 1999 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as warranted characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For f
6. Note Maximum ratings are absolute ratings exceeding any one of these values may cause irreversible damage to the integrated circuit 3 2 Operating Range 40 C lt T lt 150 C Parameter Symbol Limit Values Unit Remarks min max Supply voltage Vs Vuvorr 42 V After Vs rising above Von Input voltages Vu 0 3 15 V Input voltages V 0 3 J10 V Output current Dai 0 2 mA Junction temperature T 40 150 C Note In the operating range the functions given in the circuit description are fulfilled Data Sheet 8 2001 02 01 Infineon BTS 7750 GP technologies 3 3 Electrical Characteristics Isu Igy lg 14 0 A 40 C T 150 G 8 V lt Vs lt 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min typ max Current Consumption HS switch Quiescent current Ts 5 8 uA IH1 IH2 0V T 25 C 12 uA IH1 IH2 0V Supply current Is 1 5 2 6 mA IH1 orIH2 5V Vs 12V 3 5 2 mA IH1 and IH2 2 5V Vs 12V Leakage current of Isuk 6 uA Vn Vs O V highside switch Leakage current through liko 10 mA 32A logic GND in free wheeling Jey Za condition Current Consumption LS switch Input current Ii 8 30 uA V 5V normal operation 160 300 IA 17 5 V failu
7. fully protected and contains the control and diagnosis circuitry Also the low side switches are fully protected the equivalent standard product is the BTS 134 D In contrast to the BTS 7750 G which consists of the same chips in an P DSO 28 package the P TO263 15 1 PowerPack offers a much lower thermal resistance which opens up applications with even higher currents in the automotive and industrial area Data Sheet 1 2001 02 01 Infineon BTS 7750 GP technologies 1 3 Pin Configuration top view Molding Compound IL 1 Heat Slug 1 NC DL1 SL1 NC SH1 Heat Slug 2 GND IH1 DHVS DHVS ST IH2 SH2 NC Heat Slug 3 IL2 DL2 NC SL2 Figure 1 Data Sheet 2 2001 02 01 Infineon BTS 7750 GP technologies 1 4 Pin Definitions and Functions Pin No Symbol Function IL1 Analog input of low side switch 1 2 NC Not connected 3 SL1 Source of low side switch 1 4 NC Not connected 5 SH1 Source of high side switch 1 6 GND Ground of high side switches 7 IH Digital input of high side switch 1 8 DHVS Drain of high side switches and power supply voltage 9 ST Status open Drain output 10 IH2 Digital input of high side switch 2 11 SH2 Source of high side switch 2 12 NC Not connected 13 IL2 Analog input of low side switch 2 14 NC Not connected 15 SL2 Source of low side switch 2 16 DL2 Drain of low side switch 2 Heat Slug 3 or Heat Dissipator 17 DHVS Dra
8. Diagnosis are detected by switching the open drain output ST to low A open load detection is not available Freewheeling condition does not cause an error 2 Truthtable and Diagnosis valid only for the High Side Switches Flag IH1 IH2 SH1 SH2 ST Remarks Inputs Outputs 0 0 L L 1 stand by mode Normal operation 0 1 L H 1 switch2 active identical with functional truth table 1 0 H L 1 switch1 active 1 1 H H 1 both switches active Overtemperature high side switch 1 0 X L X 1 1 X L X 0 detected Overtemperature high side switch2 X 0 X L 1 X 1 X L 0 detected Overtemperature both high side switches O 0 L L 1 X 1 L L 0 detected 1 X L L 0 detected Undervoltage X X L L 1 not detected Inputs Outputs Status 0 Logic LOW Z Output in tristate condition 1 No error 1 Logic HIGH L Output in sink condition 0 Error X don t care X Voltage level undefined Data Sheet H Output in source condition 2001 02 01 Infineon BTS 7750 GP technologies 3 Electrical Characteristics 3 1 Absolute Maximum Ratings 40 C lt T lt 150 C Parameter Symbol Limit Values Unit Remarks min max High Side Switches Pins DHVS IH1 2 and SH1 2 Supply voltage Vs 0 3 42 V Supply voltage for full short sce 28 V circuit prote
9. ction HS drain current Ts 10 A Te 125 C DC HS input current 1 5 b mA Pin IH1 and IH2 HS input voltage Vin 10 16 V Pin IH1 and IH2 Note internally limited Status Output ST Status pull up voltage Var 0 3 15 4 V Status Output current la 5 mA Pin ST Low Side Switches Pins DL1 2 IL1 2 and SL1 2 Drain Source Clamp voltage Vos 42 V V 0Vilyx1mA Supply voltage for short Vosu scr 36 V V 5V circuit protection 20 V V 10V LS drain current Ip 12 7 A Te 125 C DC LS input voltage V 0 3 J10 V Note internally limited Temperatures Junction temperature T 40 1150 C Storage temperature 3g 55 150 eC Data Sheet 7 2001 02 01 Infineon BTS 7750 GP technologies 3 1 Absolute Maximum Ratings cont d 40 C lt T lt 150 C Parameter Symbol Limit Values Unit Remarks min max Thermal Resistances one HS LS Path active LS junction case Re L 1 7 K W HS junction case Re 1 7 K W Junction ambient Riria 26 K W device soldered to Rirja Titusy Piusy Pu sy reference PCB with 6 cm cooling area ESD Protection Human Body Model acc MIL STD 883D method 3015 7 and EOS ESD assn standard S5 1 1993 Input LS Switch Vesp 2 kV Input HS Switch Vesp 1 kV Status HS Switch Vesp 2 kV Output LS and HS Switch Vesp 8 kV allother pins connected to Ground
10. in of high side switches and power supply voltage Heat Slug 2 or Heat Dissipator 18 DL1 Drain of low side switch 1 Heat Slug 1 or Heat Dissipator Pins written in bold type need power wiring Data Sheet 3 2001 02 01 BTS 7750 GP technologies 1 5 Functional Block Diagram DHVS L 8 17 9 ST A Diagnosis Biasing and Protection 7T IH1 Driver IN OUT ZN oo L L 0 1 L H 40 m 1 0 HILL SH2 IH2 Le 1 1 HH DL2 6 GND SH1 Protection DL1 1 Gate Ir S Driver Protection IL2 is Gate Driver Figure 2 Block Diagram Data Sheet 4 2001 02 01 technologies j 1 6 Circuit Description Input Circuit The control inputs 1H1 2 consist of TTL CMOS compatible Schmitt Triggers with hysteresis Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages The inputs are protected by ESD clamp diodes The inputs IL1 and IL2 are connected to the internal gate driving units of the N channel vertical power MOS FETs Output Stages The output stages consist of an low Rpson Power MOS H bridge In H bridge configuration the D MOS body diodes can be used for freewheeling when commutating inductive loads If the high side switches are used as single sw
11. itches positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes Short Circuit Protection The outputs are protected against output short circuit to ground output short circuit to the supply voltage and overload load short circuit An internal OP Amp controls the Drain Source Voltage by comparing the DS Voltage Drop with an internal reference voltage Above this trippoint the OP Amp reduces the output current depending on the junction temperature and the drop voltage In the case of overloaded high side switches the status output is set to low The fully protected low side switches have no status output Overtemperature Protection The high side and the low side switches also incorporate an overtemperature protection circuit with hysteresis which switches off the output transistors In the case of the high side switches the status output is set to low Undervoltage Lockout UVLO When V reaches the switch on voltage Vuvon the IC becomes active with a hysteresis The High Side output transistors are switched off if the supply voltage V drops below the switch off value Vvorr Data Sheet 5 2001 02 01 e Infineon technologies BTS 7750 GP Status Flag The status flag output is an open drain output with Zener diode which requires a pull up resistor c f the application circuit on page 14 Various errors as listed in the table
12. re mode Leakage current of lowside Jp ix 2 10 uA V 0V switch Under Voltage Lockout UVLO HS switch Switch ON voltage Vuvon 4 5 V Vs increasing Switch OFF voltage Vuvorr 1 8 3 2 V V decreasing Data Sheet 9 2001 02 01 Infineon BTS 7750 GP technologies 3 3 Electrical Characteristics cont d Lau lsn Lis fa 0 A 40 C lt T 150 C 8 V lt Vs lt 18V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min typ max Output stages Inverse diode of high side Vz 0 8 1 2 IV Vey 3 switch Forward voltage Inverse diode of lowside Va 0 8 1 2 IV la 23A switch Forward voltage Static drain source Rosony I 70 90 mQ lg 1A on resistance of highside T 25 C switch Static drain source Rosone 45 60 mO 1A on resistance of lowside Va 25V switch T 25 C Static path on resistance Rpson 285 IMQ Rosonn Abs one Igy 1 A Short Circuit of highside switch to GND Initial peak SC current I scp H 14 15 18 A T 40 C 10 12 15 A T 25 C 7 8 5 10 A T 150 C Short Circuit of highside switch to Vs Output pull down resistor Ro 8 15 35 kO Vo5 3 V Short Circuit of lowside switch to V Initial peak SC current IscpL 21 28 34 A 11 14 18 A 1i 16 22 27 A 7 25 C 1j
13. urther information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in life support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Data Sheet 16 2001 02 01
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lnfineon BTS 7750 GP Manual