TOSHIBA 2SK2613 Manual(1)(1)
Contents
1. o 2 o 8 5 ES z a a N 2 2 ai c O D r2 S Oo o lt 5 EON o E 9 g s eez lt o e 2 z E c YN s 5 gt o o o gt 2 E 3 3 E 2 9 o 9 TN S Y a M T E 7 v Yd 1ueuno esje ei ureJq A MA eBeyo pjousaJui ejes A SQA 9eBeyo eounos urejq o Sg o g E g Q e 9 c gt 9 9 9 8 lt 9 o QO Oo o 2 a gt gt I 8 B o g Y g o 8 g E o E E 8 s 8 E 5 E g 2 3 9 9 9 o 8 n o 2 8 5 amp E 9 i g c D c 2NO a 3 go 8 Sorg E o E S END EN i S 075 SOI S gt a o2lg e Q Q e N e e N lt eo Mm c NO SQy eougjsisei uo eounos ure4g 4d O ouge oedeo M Gq uonedissip jewod ureuq Total gate charge Qg nC TOSHIBA 2SK2613 01 Single pulse t 0 01 ge T Duty t T Rth ch c 0 833 C W Ith tw 10 o c s o Q 1 Duty 0 5 a E 0 2 o o lt 0 1 gt 2 0 1 o c 0 02 8 PDM o o N E z 0 001 10u 100 u 1m Om 100m 1 10 Puls2. 75 OGHIBNA Tua ZW Te SERI 2SK261 3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type x MOSIII Switching Regulator Applications DC DC Converter and I Motor Drive Applications Unit mm 159max e Low drain source ON resistance RDS ON 1 4 Q typ e High forward transfer admittance Y s 6 0 S typ e Low leakage current Ipgs 100 pA max Vps 800 V e Enhancement model Vth 2 0 4 0 V Vps 10 V Ip 1 mA 20 0 0 3 Absolute Maximum Ratings Ta 25 C Characteristics Symbol Dona we m v Drangate vorago esz voor 9 v Gate source voltage source Gate source voltage Ves so v aF NSE Drain current 20 5 0 5 _ 5450 2 2 DRAIN HEAT SINK 3 SOURSE JEDEC Drain power dissipation Tc 25 C power Drain power dissipation Tc 25 C Tc 25 C 150 Single pulse avalanche energy Note 2 JEITA Avalanche current current E REIN e CNRC MT Note Using continuously under heavy loads e g the application of high temperature current voltage and the significant change in temperature etc may cause this product to decrease in the reliability significantly even if the operating conditions i e operating temperature current voltage etc are within the absolute maximum ratings Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Ha
3. TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties Please contact your sales representative for product by product details in this document regarding RoHS compatibility Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations 6 2006 11 09
4. e width ty S Safe operating area 100 1000 50 3oL D max pulsed g 800 fs 00 us 10L ID max continuous lt 5 1 ms 2 W 600 a 3 DC Operation Tc 25 C ib 400 o 0 5 c 03 e LL a c 2 200 0 1 lt Single nonrepetitive pulse 0 05 o 25 C 0 03 i Curves must be derated linearly 0 n Vpss max 25 50 75 100 125 150 0 01 with increase in temperature 1 3 10 30 100 300 1000 3000 10000 Channel temperature initial Tch C Drain source voltage Vps V Test circuit Wave form Re 252 Eag L I2 BvDss__ Vpp 90 V L 26 3 mH 2 BVDSS VDD 5 2006 11 09 TOSHIBA 2SK2613 RESTRICTIONS ON PRODUCT USE 20070701 EN e The information contained herein is subject to change without notice e TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In deve
5. loping your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk The products described in this document shall not be used or embedded to any downstream products of which manufacture use and or sale are prohibited under any applicable laws and regulations The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by
6. ndling Precautions Derating Concept and Methods and individual reliability data i e reliability test report and estimated failure rate etc Thermal Characteristics ee Characteristics Symbol Thermal resistance channel to case 0 833 T 7E Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 Vpp 90 V Teh 25 C L 26 3 mH RG 25 O laR 8A Note 3 Repetitive rating Pulse width limited by max junction temperature ws This transistor is an electrostatic sensitive device Please handle with caution 1 2006 11 09 TOSHIBA 2SK2613 Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition ES Drinssuebeoaownveiogs Vems ec vos 0v 39 v_ penso ns vos eo0v ves ov m wa Dranssuebeaaownveiogs vemoss p Oma ves ov we v_ esee roson es ovio sa n a x oo E s 00 pero e dr ear mere Ip 4A it Switching time RL 100 0 Fall time tr 77 Vpp 400 V VOUT lt 19 E Turn OFF time toft Duty lt 1 tw 10 us Total gate charge gate source plus gate drain Gate source charge NI Vpp 400 V Ves 10 V Ip 8 A Gate drain miller charge Qa Source Drain Ratings and Characteristics Ta 25 C Characteristics Symbol Test Condition cenimowsdonievenscnen woe oR E ES pe a Pecan reveseainent wen ome C lt Emaa
7. r _vosr ow Avessov 19 v Marking Part No or abbreviation code Lot No A line indicates lead Pb free package or lead Pb free finish 2 2006 11 09 2SK2613 TOSHIBA Ip Vps Ip Vps Common source Pulse test v ai jueuno ureiq Ves 4 75 V Q g 5 o o c S E E o Oo Pulse test v ai jueuno ulesq 100 80 60 40 20 V Drain source voltage Vps V Drain source voltage Vps Vps Vas Ip Vas Q 3 o D S E E o Pulse test o N lt o aq A SQA BeloA vmnos ureIq 20V Q 5 o o c S E E o Oo VSD Pulse test v G 1jueuno ureug o Gate source voltage Vgs V Gate source voltage Vgs V Common source VSD A 6 NO sqy 99UE SIS9J UO 92JnoS UIEJ 20V Pulse tes Ip Drain current A Ip s 5 gue upe JOJSUBI pJeMo4 Drain current 2006 11 09 2SK2613 IDR Vps Rps ON Tc TOSHIBA A S9A eBeyo eoinos ejec 2006 11 09
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TOSHIBA 2SK2613 Manual(1)(1)