SGS-THOMSON STP80N03L-06 Manual
Contents
1. AES RAGA GMS Aman BRENG ky SGS THOMSON MICROELECTRONICS STP80NO03L 06 N CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR TYPE Vpss Rps on Ip STP80N03L 06 30 V lt 0 006 Q 80A TYPICAL Rps on 0 005 Q AVALANCHE RUGGED TECHNOLOGY 100 AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 C HIGH CURRENT CAPABILITY 175 C OPERATING TEMPERATURE HIGH dV dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS a HIGH CURRENT HIGH SPEED SWITCHING a POWER MOTOR CONTROL a DC DC amp DC AC CONVERTERS a SYNCRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS TENTATIVE DATA INTERNAL SCHEMATIC DIAGRAM D 2 6 1 e c H s 3 SCO6140 Svmbol Parameter Value Unit Vps Drain source Voltage Vas 0 30 V Vper Drain gate Voltage Ras 20 kQ 30 V Ves Gate source Voltage 15 V In Drain Current continuous at Te 25 C 80 A Io Drain Current continuous at Tc 100 C 60 A Ibm e Drain Current pulsed 320 A Piot Total Dissipation at Te 25 C 150 WwW Derating Factor 1 w C dV dt 1 Peak Diode Recovery voltage slope 5 V ns Tstg Storage Temperature 65 to 175 C Tj Max Operating Junction Temperature 175 C e Pulse width limited by safe operating area March 1996 1 5 STP80N03L2. Taiwan Thailand United Kingdom U S A 5 5 kay SGS THOMSON II icRosLectRomes
3. 009 Q Vas 5V Ip 40A Te 100 C 0 018 Q ID on On State Drain Current Vps gt Ip on X Rps on max 80 A Ves 10V DYNAMIC Symbol Parameter Test Conditions Min Typ Max Unit Gts Forward Vos gt Ion X RDs on max ID 10A 35 S Transconductance Ciss Input Capacitance Vps 25V f 1MHz Ves 0 6000 pF Coss Output Capacitance 1000 pF Crss Reverse Transfer 250 pF Capacitance 2 5 kai SGS THOMSON MICROELECTRONICS STP80N03L 06 ELECTRICAL CHARACTERISTICS continued SWITCHING ON Symbol Parameter Test Conditions Min Typ Max Unit ta on Turn on Time Vpp V ID A ns tr Rise Time Re Q Vas V ns see test circuit figure 3 di dt on Turn on Current Slope Vpp V Ib A A us Re Q Ves V see test circuit figure 5 Qg Total Gate Charge Voo V Ip A Ves V nC Qgs Gate Source Charge nc Qga Gate Drain Charge nc SWITCHING OFF Symbol Parameter Test Conditions Min Typ Max Unit trvotf Off voltage Rise Time Vpp V Ip A ns ti Fall Time Re Q Ves V ns te Cross over Time see test circuit figure 5 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Typ Max Unit Isp Source drain Current 80 A Ispm e Source drain Current 320 A pulsed Vsp Forward On Voltage Isp A Vas 0 1 5 V trr Reverse Recovery Isp A di dt A us ns Time Vopo V Tj C Orr Reverse Recovery s
4. 06 THERMAL DATA Rthj case Thermal Resistance Junction case Max 1 C W Rinj amb Thermal Resistance Junction ambient Max 62 5 C W Rinc sink Thermal Resistance Case sink Typ 0 5 C W T Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lAR Avalanche Current Repetitive or Not Repetitive 60 A pulse width limited by Tj max 5 lt 1 Eas Single Pulse Avalanche Energy 600 mJ starting Tj 25 C Ip lan Voo 25 V EAR Repetitive Avalanche Energy 150 mJ pulse width limited by Tj max 5 lt 1 lAR Avalanche Current Repetitive or Not Repetitive 60 A Tc 100 C pulse width limited by Tj max lt 1 ELECTRICAL CHARACTERISTICS Tcase 25 C unless otherwise specified OFF Symbol Parameter Test Conditions Min Typ Max Unit V eRjnss Drain source Ip 250 HA Vas 0 30 V Breakdown Voltage Ipss Zero Gate Voltage Vps Max Rating 250 HA Drain Current Vas 0 Vps Max Rating X0 8 Te 125 C 1000 HA lass Gate body Leakage Vas 215 V 100 nA Current Vps 0 ON Symbol Parameter Test Conditions Min Typ Max Unit Vas th Gate Threshold Voltage Vps Vas Ip 250 pA 1 2 5 V Rps on Static Drain source On Vas 10V Ip 40 A 0 005 0 006 Q Resistance Vas 10V Ip 40A T 100 C 0 012 Q Ves 5V ID 40A 0 006 0
5. ee test circuit figure 5 uc Charge IRRM Reverse Recovery A Current Pulsed Pulse duration 300 us duty cycle 1 5 e Pulse width limited by safe operating area 1 Iso lt 60 A di dt lt 200 A us Voo lt Vierypss Tj lt Tumax 3 5 Lyg SGS THOMSON YI jmenosLzernomes STP80N03L 06 TO 220 MECHANICAL DATA 4 5 kay SGS THOMSON II McroeLECTRONICS STP80N03L 06 Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is granted by implication or otherwise under any patent or patent rights of SGS THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectonics 1995 SGS THOMSON Microelectronics All Rights Reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland
Download Pdf Manuals
Related Search
SGS THOMSON STP80N03L 06 Manual