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ST TIP120/121/122 TIP125/126/127 Manual

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1. WARS RAGA BIER Aman BEREME er TIP120 121 122 Yy TIP125 126 127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS a STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120 TIP121 and TIP122 are silicon Epitaxial Base NPN power transistors in monolithic Jedec TO 220 plastic package They are intented for use in power linear and switching applications The complementary PNP types are TIP125 TIP126 and TIP127 respectively Darlington configuration mounted in S TO 220 INTERNAL SCHEMATIC DIAGRAM C 2 C 2 E oases A in gl Y BI eS a N Lowi 4 1 Ri A po Ra Tl N R2 Ra lL Zl NOE a SC07840 E 3 5007850 ES 3 Ri Typ 5 KQ R2 Typ 150 Q ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP120 TIP121 TIP122 PNP TIP125 TIP126 TIP127 Vcso_ Collector Base Voltage le 0 60 80 100 V Vceo Collector Emitter Voltage lg 0 60 80 100 Vv Vego Emitter Base Voltage Ic 0 V Ic Collector Current A Icm Collector Peak Current 8 A le Base Current 0 1 A Prot Total Dissipation at Tcase lt 25 C 65 W Tamb lt 25 C 2 W Tstg Storage Temperature 65 to 150 C Tj Max Operating Junction Temperature 150 C For PNP types voltage and current values are negativ
2. e March 2000 1 4 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 THERMAL DATA Rthj case Thermal Resistance Junction case Max 1 92 C W Rinj amb Thermal Resistance Junction ambient Max 62 5 C W ELECTRICAL CHARACTERISTICS Tease 25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit Iceo Collector Cut off for TIP120 125 Vce 30 V 0 5 mA Current Ig 0 for TIP121 126 Vce 40 V 0 5 mA for TIP122 127 Vce 50 V 0 5 mA IcBo Collector Cut off for TIP120 125 Vc 60 V 0 2 mA Current Is 0 for TIP121 126 Vcs 80 V 0 2 mA for TIP122 127 Vcs 100 V 0 2 mA lego Emitter Cut off Current VegB 5V 2 mA Ic 0 Vceo sus Collector Emitter Ic 30 mA Sustaining Voltage for TIP120 125 60 V Ip 0 for TIP121 126 80 V for TIP122 127 100 V Vce sat Collector Emitter Ic 3A IB 12 mA 2 V Saturation Voltage Ic 5A lg 20 mA 4 V VBE on Base Emitter Voltage lc 3A Vce 3 V 2 5 V hre DC Current Gain Ic 0 5A Vce 3V 1000 Ic 3A Vce 3 V 1000 x Pulsed Pulse duration 300 us duty cycle lt 2 For PNP types voltage and current values are negative 2 4 Y TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TO 220 MECHANICAL DATA TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsib
3. ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specification mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U S A http www st com 2 4 4

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