MITSUBISHI CM150TL-12NF IGBT MODULES
Contents
1. 103 TYPICAL 100102 3 5710223 5710 123 57100 23 5710 lt 7 9 7 Single Pulse lt m Tc 25 Ez 5 3 Under the chip We 5522 ON 5 2 10 10 gt O 5 7 X 7 mix FS 5 5 gt 102 OS a 3 g gt 7 NU 2 2 5 Conditions am 2 IGBT part n Tu t Vcc 300V S 107 Per unit base 10 tc IT on 7 7 3 VGE 15V OZ 5 Rihlj c 0 17 C W 5 gt RG 4 20 zz 3 FWDi part 5 au 25 2 unit base 2 gt j Rih j c 0 31 C W Inductive load 10 3 101 2 5 7102 2 5 7103 10523 5710423 5710 3 EMITTER CURRENT 5 SWITCHING LOSS vs SWITCHING LOSS vs COLLECTOR CURRENT GATE RESISTANCE TYPICAL TYPICAL 101 2 Esw off m Conditions E Vcc 300V 8 2 t 5 15V a 3 8 Ic 150A 52 2 Tj 125 C 1 s 2 Esw on E Inductive load 0 o C snubber at bus 100 Corn O 10 7 onditlons 7 Esw off 2 5 Vcc 300V 2 d 5 VGE 15V T 3 RG 4 22 E 3 5 Tj 125 C z 2 n Inductive load o Esw on C snubber at bus 10 1 100 101 2 5 7102 2 5 7103 100 2 57101 2 5 7102 COLLECTOR CURRENT Ic A GATE RESISTANCE Ra Q RECOVE2. Rth c f Contact thermal resistance Case to fin Thermal compound Applied 1 6 module 2 RG External gate resistance 1 Tc measured point is just under the chips If you use this value Rth f a should be measured just under the chips 2 Typical value is measured by using Shin etsu Silicone G 746 Note 1 IE VEC amp represent characteristics of the anti parallel emitter to collector free wheel diode FWDi 2 Pulse width and repetition rate should be such that the device junction temp Tj does not exceed Tjmax rating 3 Junction temperature Tj should not increase beyond 150 C 4 Pulse width and repetition rate should be such as to cause neglible temperature rise MITSUBISHI ELECTRIC MITSUBISHI IGBT MODULES CM150TL 12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR EMITTER SATURATION OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS TYPICAL TYPICAL 300 _ 4 15 25 gt 15V 20V lt 250 13 2 12 u 3 E E gt Z 200 E tt 29 E ra ps 42 D a 150 TI 2 52 e
3. 1 2 a 100 i9 Zen 10 1p a 2 9 50 gt Tj 25 C 819 lt Tj 125 C 0 Sd 0 2 4 6 8 10 0 50 100 150 200 250 300 COLLECTOR EMITTER VOLTAGE Vck V COLLECTOR CURRENT Ic A COLLECTOR EMITTER SATURATION FREE WHEEL DIODE VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS TYPICAL TYPICAL 0 103 5 Tj 25 p 8 2 Wb cu 8 3 E 5 2 6 Gi ct 102 Oo 2 gt 4 7 46 Ic 150A 5 ok Ic 300A E 3 Og 2 gt E Si lt Ic 60A S o 101 6 8 10 12 14 16 18 20 0 GATE EMITTER VOLTAGE V e V EMITTER COLLECTOR VOLTAGE Vec V CAPACITANCE VcE HALF BRIDGE CHARACTERISTICS SWITCHING CHARACTERISTICS TYPICAL TYPICAL 102 m 7 t 5 3 2 A 10 7 gt 5 5 2 3 2 td on 2 T i Coes o Conditions lt 100 Vcc 300V 5 Cres 15V lt 3 RG 4 20 A lt 2 Tj 125 C o 1 1 VGE OV T Inductive load 10 123 5710023 57101 23 57102 101 2 57102 2 5 7103 COLLECTOR EMITTER VOLTAGE V COLLECTOR CURRENT Ic A Jun 2004 MITSUBISHI ELECTRIC REVERSE RECOVERY CHARACTERISTICS OF FREE WHEEL DIODE MITSUBISHI IGBT MODULES CM150TL 12NF HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS IGBT part 8 FWDi part
4. CM150TL 12NF APPLICATION MITSUBISHI IGBT MODULES CM150TL 12NF HIGH POWER SWITCHING USE e Insulated Type 6 elements in a pack AC drive inverters 8 Servo controls etc OUTLINE DRAWING amp CIRCUIT DIAGRAM Dimensions in mm 2 05 5 MOUNTING HOLES F f W Housing Type of A and B J S T Mfg Co Ltd A B8P VH FB B B B2P VH FB B SCREWING DEPTH Vo CN3e an CIRCUIT DIAGRAM Jun 2004 MITSUBISHI ELECTRIC MITSUBISHI IGBT MODULES CM150TL 12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS 25 Parameter Conditions Ratings Collector emitter voltage G E Short 600 Gate emitter voltage C E Short 20 Collector current DC 93 C 150 Pulse 300 IE IEM Note 1 Emitter current 150 Pulse 300 PC Note 3 Maximum collector d
5. RY LOSS vs RECOVERY LOSS vs IE GATE RESISTANCE TYPICAL TYPICAL 101 7 8 g gt 2 24 g g 3 2 RE E E 2 N N 42 42 O 100 Conditions 7 cc Vcc 300V_ c 8 z VGE 15V 2 RG 4 20 3 O Tj 125 C B Inductive load m Inductive load 10 1 snubber at bus dde C snubber at bus 101 2 57102 2 5 7103 100 23 57101 23 5 710 EMITTER CURRENT IE GATE RESISTANCE Ra 2 Jun 2004 MITSUBISHI ELECTRIC GATE EMITTER VOLTAGE Vee V GATE CHARGE CHARACTERISTICS TYPICAL 200 400 600 800 1000 GATE CHARGE nC MITSUBISHI ELECTRIC MITSUBISHI IGBT MODULES CM150TL 12NF HIGH POWER SWITCHING USE Jun 2004
6. issipation Tc 25 C 730 Ti Junction temperature 40 150 Tstg Storage temperature 40 125 Viso Isolation voltage Main Terminal to base plate AC 1 min 2500 Torgue strength Main Terminal 5 2 5 3 5 Mounting holes 5 2 5 3 5 Weight Typical value ELECTRICAL CHARACTERISTICS Tj 25 Symbol Parameter Test conditions 350 Limits Typ ICES Collector cutoff current VCE VCES VGE OV VGE th Gate emitter threshold voltage Ic 15mA 10V IGES Gate leakage current VGE VGES VCE OV VCE sat Collector emitter saturation voltage Tj 25 C Ic 150A VGE 15V Tj 125 C Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance 10V VGE OV Qa Total gate charge Vcc 300V Ic 150A VGE 15V td on Turn on delay time tr Turn on rise time td off Turn off delay time tf Turn off fall time trr Note 1 Reverse recovery time Qrr Note 1 Reverse recovery charge Vcc 300V Ic 150A VGE1 VGE2 15V RG 4 20 Inductive load switching operation 150A VEC Note 1 Emitter collector voltage IE 150A VGE OV Rth j c Q Rth j c R Thermal resistance IGBT part 1 6 module FWDi part 1 6 module
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MITSUBISHI CM150TL 12NF IGBT MODULES