MITSUBISHI机电 MOSFET module Manual 装载 Trench(沟槽)MOSFET 硅片 07A/2A/3A series Manual
Contents
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5. Changes for the Better 22 MOSFET MOSFET Tn VDS XM HUE L H L VGS LH H h L L L Ba ENAJ
6. 2 MOSFET f 4 1 ht E k Ma Y K x Ea uc j a F 1 K MSS SL LA r L Wa Se o 3 Y E iin e k a S 4 1 3 4 3 MOSFET MOSFET 4 3 Hj t wb RC DI Id c Enn d nm Ll UM rx m N MEM IL m 5e or Ha Pa Ru E rB RE 4 3 5 MOSFET UL
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8. SOA Go 19 4 38 MOSFET 8 Vgs idt I x ia il aba e fe FGs fc L Fas Fasy e Qa fe 4 RO a D dVps dt DC 10V ns MOSFET o e E aX dV dt 15kV us IC
9. 0 1 Fit Fit 50 60 70 80
10. 7 Changes for the Better MOSFET l MOSFET MOSFET 1 MOSFET MOSFET
11. Coss 2 taon 0 10 t 1096 90 a ofr 90 9096 90 1096 PT Eon 10 10 10 2
12. Ldi dt FB Hb zs EA Hsc 6 1 2 3 4 5 di dt MOSET 1 5 MOSFET 1 2 4 5 2 2 RC RCDi
13. tr Qr E Ru EET Race WM MERIR MLA O T Changes for the Better gt MOSFET FM MOSFET Tee K
14. 11 20V 16 5V 11V Hi F Vos cox MOSFET dv dt MOSFET 22 27128 MOSFET IGBT Vos MOSFET a 2V 9 ERR W Q 19 1 Vos Vps cow
15. WRK o 5 ZRI MANE RE AES IHE 1 mw JEHA EH Fb mde HE 5 23 CFMeOUTU 07A L l L PT Ws T Ll LIII E MB ip md pulse 5 710 2 3 ID A 23 5 7103 Changes for the Better gt MOSFET 1 Rross Re Rross JINE Ro Rross FM200TU 07A 13 130 13 FM400TU 0 6 3 63 63 FM600TU 07 4 2 42 42 VENENIS FM200TU 2A 13 130
16. en aaa EAD RE x e im ES mm mo E ER s te ht Min aaa JESFB 8 9 40mm 300mm Changes for the Better gt MOSFET D 5 HH LR NA NS NS LO S y i JR P owl T um ET m zr I U v H FA e Oe HESSE 13 GERI EHE EIU E TH 7 18118 FPE Vl MALE 14 DS N 11 ius DE C ETE EST L j E ee z 12 Changes for the Better 42
17. Is Vii IsM _ ERU Changes for the Better gt MOSFET Ipss VS i oss Ciss
18. A AENEA LAXE TR WRH 5 35 C 45 7596 H 1 De HH UL 94 VO MOS 1
19. cosb x PMW Output current IDp x sin x 1 Dx sin x 8 PWM Duty x Vps ow Vsp Vds on Vds on Idpxsinx Vsd Vsd a 1 xIsdp Idp xsinx MOSFET 1 Dsin x 8 rx dp lt sm x x sm x x dx ZA z I ERES 1 Dsin x 1 x x dx k wma 7 MOSFET PWM Psw on 2 Idp x sin x x sn x x dx ix n Ais ki Changes for the Better gt MOSFET 52 52 FWDi Vdd hr Psw x foede E 4 g inca Tdp ain x x tria Ip lt sin x x fc dx HHPH TE A SR 11 e 1 P
20. MOSFET 1 CV 150 CV 110 2 150 200 50 60 3 Clus EA FO Changes for the Better 3 4i 70 80 4 D EHH bana JE 40 5 SC 40 C
21. 31 33 e Ra Rao lt Rex10 e b 2 Changes for the Better _ _ dn _ _ _ VDS 28 lb 2 EERE WAE ker 30 TES sa ls gt 2 Sua Scc gs Ff e N s PH Dc RO d OS 31 MOSFET PATE TORTTA EB SC nl 34 Changes for the Better 7 3 MOSFET MOSFET 43 SW T
22. 20V Jie BUG BUS T 2 ER EAA o AR EE HI TES f Z Bilha WEH W cte Ahh Z Je BEJETT TENE e Changes for the Better gt MOSFET y A PET KARRIERA Se CRR WME JE LER H T 28 23 i e EC BS d 1 4 MFZ gt wna 0 1 RERET HJ KE JJ
23. P C m 2 ki lid 6 Iz 3 2 3 2 4 4 lt i ibn SE as LAERT JJ q J u ERM UMA AN 5 6 9 4 RAEE ORRE 2 AE Changes for the Better gt MOSFET face Ir Fi 5 Ads 1 000 000 000 p ee 10 000 000 Lu 1 000 000 100 000 L3 33480 4d A prd AT C 6 233
24. P ERU CL2 P N ZLIBIPA AERE TREE No P N P N 5 Ly a y Changes for the Better 2 1112 10 200A 6 JE 2 100A 600A 2 D 10 150 6 a b 200A 600A 2 c a e 400A 1 a a 6 3 1 2 1 7 7621528 Q jh 7 3 MOSFET
25. BT BAT IRE PT Abra ROSE Ciss 2 MOSFET MOSFET YW mu BJ di dt 52 re HS e ld s Vds I m pes jo dod d d aid n K iiid d mi a n W s ton tof 2 3 KAA HZ HTE MOSFET 20V 2 1 MOSFET C 9 pa e 2 VI 4 http www mitsubishichips com Japan reliabil ity Aindix html 3 1 80
26. E E E 14 4 eee 16 I lb Fa a 17 18 1 2 22 19 23 20 3 me HH ee nnn 28 E E 25 5 26 6 ERA n ETE 7 MOSFET FWhmHJIR ee e HRHHHHMHHHMHMHHMHHHHRHHRHHPRHMHMMMMHMHHRRHHRRRR 27 1 MOSFET 2 3 TES 4 e HH HH HH HH HH HH HR IIMRIRRMRRRMMeee 28 5 35 6 27 7 eeeeeeeeeeeeeeeM M MM HMM 39 s 43 45 Changes for the Better MOSEET 3 MOSFET 1 Trench 1 MOSFET Trench 2 MOSF B MOSFET 20 m JH 035um
27. TO 220 5A Ro TI E BH Ro c MOSFET MOSFET n 18 gt D MOSFET Vas 12V 1SV VGs 2V 10V MOSFET A Ra s lt didt k Ra Vps CMR dV dt Changes for the Better 2 11 16 SV
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29. Changes for the Better gt MOSFET E N 9 4 4 1 1 JEITA IEC 42 IGBT 300A IGBT CM300DY 24NF 3 Changes for the Better gt MOSFET de 1 AMOOC 5 0C 5 10 AER BBL 60
30. Zt ch c twl twl BrEA Tc Tc max 150 T ch c Changes for the Better gt MOSFET 3 tw2 gt 1sec 2 52 TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE OF A TRANSISTOR MODULE OF HEATSINK dih am l L 1073 1071 10 10 10 COMPOSE TWO GRAPHS BY ADDING CONTACT THERMAL RESISTANCE Rihjz n zh FRrhich al 107 107 1071 109 qp 102 103 C t sec JLINCTION AMBIENT TRANSIENT THERMAL IMPEDANCE 52 Il 2 NT ch a Rth ch a xPAy Zth ch a tw2 xP Ay Zth ch a tw2 xP 4 Zth ch a tw1 xP4 Zth ch a tw1 xP1 Rth ch a XPAy P P Ay XZth ch c tw2 P1 P4 xZth ch c tw1 BH Pl Tch Ta A T ch a Ta A Lic f ism 53 Prav XE TG BOAT IRSE AJ Tf Ta PQ AV J PRAV xN Rth f a Ta n Tch C MOSFET PR AV
31. 1 12V 15V 2V e FAME TED e DIRA Ra 10 MOSFET Um s i x L Pa E Jo Xm WE CNE Pre amp WEB PB 16 MOSFET MOSFET M57962AL Cl C2 220uF b
32. 12V 15V Wm A b A imis UR DRESS vos v 19 1 Vas Vos 5V Vos Vos 3 MOSFET 5 10V 19 2 19 3 PTR Ro Ra RoD tr di dt EXE TRIB HUE TEL J 2 A JT AS 788 E Hs 9 A J T 2 306 E Ra 104 EE mm xx gt EE EI 12 103 m 7 LoL L amp RESEH RES Fe r C l T 1 uiw E 3 C 2 102 5 i 19 2 FXE E E 108 E n B j O j O as L d I E T 2 i VDOmxs48V
33. ll 1 Ld i x EE ie r1 z q i F L IT LEES Dg FT L t mu r gt i e Li Li MOSFET Lo Li 2 Rz6 Rz12 hF 100um 10um 100mm KERI HEF 20nm 1 Vi E JE
34. B 112 Ta 40C 1000 FJ ECRIRE NN ABa B12 Ta 60C RH 90 10004 5 0 m PME Ta 125C 1020 VGE 0V 1000 5 fo Xo cu Ta125 C 20 VGE 0V 1000 5 lo Te 50C 100C 5000 15 10 53 CM300DY 24NF E m m PEL mex _ Vee 1200V Vag 0 p U 5 Lx2 0 20 Vcg 0 _ 7 C Ic 30mA Vcg 10V L S L x0 8 U S LX2 Ic 300 15V 1 300 Vor 0 jio AC2500V 1 Hk U S L S L Changes for the Better gt MOSFET 5 E a COE CR 10 4 M S PTE
35. Tc 4 ia ein 8 MOSFET Changes for the Better 22 7 SB EAS EJE P BU OPNS 1 000 000 100 000 10 000 ATc C Changes for the Better gt MOSFET 3
36. 3 4 35 3 6
37. Te Vnpss Vpss MOS 7438 I HG BEAR T 438 HE BH o Trench QAF MOSFET o Ron limit vds a 8 fif E yDss Changes for the Better BTE AK BMOSFET FM200TU 07A FMA00TU 07A FM600TU 07A ART m FM200TU 2A FM400TU 2A FM600TU 2A 38 MOSFET FM200TU 3A FM400TU 3A FM600TU 3A Oen feet http www idc com co jp 2 VLAS13 01 Changes for the Better gt MOSFET x 1 A TE S M MT T HOUSE WEEERBEBSEEZR KE RIT ELZ E 57 3g co Mee PLC PC JjOptecouplr DA A ER EK CM Direct Bond Copper
38. N Rth f a Fed Tc Tc T F PQ AV 3 PR AV xRth c f Rth c TRIS Bp oH b Tc max Te max Ta PQ AV PR AV xNxRth f a PQ AV PR AV xRth ch f Raty ay Teta Ta Poar PRar Reite f POr PR AV x N mmm maa ma iama ama ma Dan Changes for the Better gt MOSFET 1 VVVF VVVF D PWM VVVF D PWM 3 PWM 1 D 2 1 D 2 100 D D Ipesin x 5 cos9 m PWM x 1 DXxsinx 2
39. UPS ss mno 10 100FIT IFIT 1x102 1 Changes for the Better gt MOSFET 10 2 2 1
40. 10000 CA Vpggs 10V Tch 25 C 2 Vos Vas a Vps cw 10 2 n X 1 1 1 1 1 100 4 MOSFET WRN 1 4 1 x 1 0 1 1 0 1 1 4 x10096 3 MOSFET 14 300A 4 300x 1 0 14 x4 1032A 3
41. HA HAL HB HK TF ar TX followed by ia 11E 02G 02H 20 24 ME 4G MH 241 28 or 28H Type CM followed by 10 15 25 40 50 75 100 180 130 105 200 400 450 00 800 900 or 1200 followed by BU BUL DD DUM DUE DUS D Y EU ED2A EGU ESU A ECSU HU HU A HUE HUS RU TJ TJA TU YEA YEIN YEZP or YE15 followed by 5F 12 17F L2H LTNFE 17XFA 1 24 HA MF NF NFH eor MH Type FM followed by 15 20 r 30 followed by BF TF followed by 5 5 9 38 10 ar 105 Type FM followed bo 30 50 75 ar 100 followed Ex DW D Y ELY ESY HA or followed to 1 2 9 10 or 108 Type CM followed 40 50 75 100 150 ar 200 followed by RL TL or YE13 followed by 12F 12H 17XF 17XFB ar MNF Type FM followed by 200 400 ar 800 followed by TU followed bar OTA DA ar 34 Changes for the Better gt MOSFET
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43. 60 10 121_ B 10 500Hz 15 2 81 98 1115 6 9 8 40N 10 1 b 260 5 1021 Hh AJ235425 C 540 5 A 112 8 8 83 10 8N m 1041 2 94 4 SN m 1061 P 1 96 3 5N m 10 1 1 47 1 7N m 101 P 0 98N m 101 7 Ta Tstg 1000 B I2 Ta Tstgmin 1000 SBAA BlTa 60C RH 90 1000 i Tc 50 C 100 5000 Ta Tstg 0 85 0 1000 Ta Tstg max VCE 20V VGE 0V 1000 JEITA ED 4701 2 CM300DY 24NF M Yu ED 4701 B 141 Al 100C 5 0C 5 10 B 31 40C 60 125C 60 10 s 0 A 1221 BJ10 500Hz 15 98 1m s 6 el i i A 260 5 C 10 1 PIERE BIRET M6 4 5N m 101 i Fue Bi Ta 125 C 1000 if EXE NM
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45. Changes for the Better e PIEI s REIRA e up BET BRIX EET DG e e e e A Sus d Sus e 100A N fu 22 NN MOSFETQW Ldi dt B C A B C A gt B gt C 3 MOSFET gt C B MAOK Vas A gt C ioop
46. 13 FM400TU 2 6 3 63 6 3 FM600TU2A 42 42 42 EMEN EMEN A 1 100kQx 3 25 C 298K 4000K 2 25 50 298 323 Ri 298K To EA B B Ri1 Roxexp1 x c Ri T K Ro To K B B 2 WE w 179838 1 177898 177914 0 177915 0 ER http www amp cony http catalog tycoelectronics com TE bin TE Menu M Part amp LG 1 amp I 13 Changes for the Better 6 200A MOSFET e e Vosa M N P Vos F h i IN 480520 U 6a0670 Vas m P 5 05 545 6355 695 Q 530570 W 680720 S 580620 In
47. 3 AIZE Reno Race A Rh d IHE Fr RI EE a a Z Wa A 2 0 92W m C 50 100um 0 8 3mm 0 30 e 2 FM200TU 07A FM200TU 2A FM200TU 3A MOSFET LABEL SIDE Changes for the Better gt MOSFET x2 8 400 0 07 400 0 2 FM400TU 3A MOSFET LABEL SIDE D
48. 30 50 75 100 150 200 300 300 00 300 or 1000 1200 by DK DY HA HA1 HB HK TF or TX fotkrwed try 12 L2E 126 12H 12HE 20 24 ME 246 24H MJ 28 or 48H 4 FM200TU 3A FM Followed by 200 400 07A 2A 3A FM 200 TU 3A WHS Power switching Semiconductors Component Ser General Infarmatian for Pawer s rithing Semicanductars Component MITSUBISHI ELECTRIC CORF EB80275 SEMICONDUCTOR DIV MITSUBISHI DENKI BLDG TOKYO 100 6310 Diodes Type EM or SR followed bar 10 15 20 30 40 50 60 75 100 150 200 250 300 400 er 500 followed by C CLA CIF CLZ C27 CA CF CZ DOF DA DF DZ HC TA TB TC TPM er UZ followed by 2H 3H 65 12 12F 125 16 16F 20 20F 205 24 24F 248 40 Hoc M Types EMIOTE H TE M EMITSTB H THEM TPM H REXENITEM 2 H TPAI 214 TPM H TEA ENMGOTB H IB M TPMLE H Pamer switching semi conductars Cat Nos Types A B C CM followed by 10 15 20 25 30 30 75 100 150 200 300 200 600 800 or 1000 followed by thru 063 DY HA LO LOL MD MIX MDL MDIE MIS ar MDC fullawed by 12H 2EH or 28K Type CM followed by 15 20 25 30 50 75 100 150 200 300 400 600 800 1000 1200 fallawed by DK DY
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52. rb vt cD 200 ID 200A iml A TES Ie HC dh TE L iil Hs Wis 2 d FM200TU A NU N50AT2 MITSUBISH ELECTRIC FU CORPORATION JAPAN 6inl N 5 A T2 0 01 L L p ie A 1 H 39 R 1 9 10 H 0 IL N 128 D F 1 5 2005 E UL OEF UL Changes for the Better gt MOSFET m T E 4 4 Ls IH P CD Changes for the Better gt MOSFET UL UL1557 E80271 UL E80276 1 ee 2004 9 21 IWJ UL File Number UL File Ne E80276 SEARCH http database ul com c ee IFRAME index htm Underwriters J Labaratories Iac Ceriricstionz zaarzh
53. 2 43 a MOSFET 44 1 Vps om VS Ip TE In Fostosy Dos X Fajon T Eey Ya dw DE 0 125 HJ Vps ov Vsp Ip 44 3 E1 tw1 W 43 46 2 238 2E fs fa P i Eon 0 e Vas r at m l N ta tb n 1 2 Fi F DC E H Eoft Vps Changes for the Better 3 MOSFET tw2 46 tw2 47 P E tw2 xN W N tw2 p T2 47 48 PAv Pavx tw2 2 W P
54. 48 b Pl Pay 3 1 twl tw1 lt lt 1lms 2 twl tw2 lms lt twl1 lt tw2 lt 1sec 3 tw2 tw2 gt 1s 1 twl1 lms AT tw2 49 Changes for the Better gt MOSFET Tchimax 49 50 Tchimax AT ch c Tch c Rth ch c xPAv Zth ch c tw2 xPAv Zth ch c tw2 xPs Rth ch c xPAv P PAv xZth ch c tw2 Rth hc KI SH Zth ch cltw2 Cc tw2 PH bl Tc Tchmax 150C Te max 150 A T ch c 2 lms lt twl lt tw2 lt 1sec Pl 5 OD 51 Wrzs BAUER o F l Tch max 51 ANT ch c Rth ch c xP av Zth tw2 xP Ay Zth ch c tw2 xP4 Zth ch c tw1 xP Zth ch c tw1 xP1 Rth ch c xPav Psy Pav xZth ch c tw2 P1 P y xZth ch c tw l Rth ch Zth ch c tw2 tw2
55. 5 6 Changes for the Better gt MOSFET Changes for the Better gt MOSFET OC A B c TRAHI 5 D Bgm HE B ES E c EM 1 U A B C D HU 1970 l Bip l TREER 1980 MOS 1000 2000 3000 Wak MOS IGBT Sd 1 MAAM BRAM EE
56. A 7 H 681 59 tB H P BPB Y B 3X siglos Y Ee 2004 09 30 FC 052 991 7311 M6x 14 JIS B 1187 Changes for the Better gt MOSFET 4 D 2 g cm x g 100hm 200hm 110x80 G 746 100um 200um F PEK AI E g 88 em x2 66 g em 2 34 4 68 g 3 4 2
57. Bc p D VR DR IER 8 1 BUT VR KHU J RE 50 100um G 746 G 746 G 747 1 silicon G 746 G 747 C Changes for the Better gt MOSFET
58. Changes for the Better gt MOSFET MOSFET RREH ITR Trench Jf MOSFET fH 07A 2A 3A MOSFET i sj m uw wj e Hip ZBUSHEwocrETH Rh EZE s JESA BAM ESHUUTXBHHIAHST RE Wi MITSUBISHI ELECTRIC IMS SSD Aash sipas ecient nent 021 52082030 021 52081502 1852 25100555 852 25100803 Changes for the Better Email igbtipemdqpnmash china madap com http www mali com WAW Mitsubls hiElectric me esh h com MOSFET FMH 0606 A 1 47 Changes for the Better gt MOSFET MOSFET 3 4 OIE E EE A E T E E EN A A TE TOT E 5 WE 7 E Q UL ee 9 11 13 1 EE REO BE 2 T Z IE
59. WM ng Vps oy Vsp Psw e PWM e PWM Tch 125 C e Psw Tch 125 L TERT IS B BU BE Q D 60Hz 20 Hz O ff lt lt 10kHz Changes for the Better gt MOSFET MOSFET Im 2006 7 27 JE C D E S VCE VdsIc Id Vcc Vdd IGBT MOSEFT 53 Tj Rth j c PD CAVO PT AV PQ AV PR AV Icp Vassav Chang
60. es for the Better gt MOSFET e e e http www MitsubishiElectric co jp semeconductors
61. h Home Company Category Name Link to File MITSUBISHI ELECTRIC CORP Power Swibching Semiconductors SEMICONDUCTOR Camparient Previnus Page Notice of Disclaimer Questions B maji elormat e o rct pubiichod Tor nil poiut clogyn pou eguz sbat n model urngcr piens obrt wie t for l u mx CHOQX 2 EBUZ 76 Changes for the Better gt MOSFET 3 Power Switching Semiconductors Component Guide Information CORF CHETI SEMICONDUCTOR DIV MIISUBISHI DENKT BLOG MARUNQOUCHI 100 5310 JAPAN Diades Type pr SE follosed bar 10 15 20 34 40 50 80 75 100 150 200 250 400 ar 500 fotloveed try C CIA CIF C1Z C22 CA CF CZ DIF D DE DZ H HC TA TC TPM ot UZ Follow d try 2H 5H 68 10 12 F 125 16 20 20 208 24 MF 235 30 H oc M Types RMIUTE H TE M EMITSTB H TB M TPEM 2H RNDUTPM 2H TPM 23 TPAE M RMS TE H IH M IPMLH IPMLMP Power switching semi comductors Cai BCRSOGME Types B C CM followed by 10 15 20 25 30 50 75 100 150 200 300 400 600 pr 1000 bar A000 thru ADSS DY EJT LD LDL MD MDL MD1 MDIL or MDC followed by 12H 2H 23H or 25k CM falleezed by 15 20 15
62. m E um E x 5 10 15 20 25 30 35 40 45 Ram 19 3 Changes for the Better 1 HzVgs Re 305 HE Q Typ Q 10V 15V xfc 1 3xQoxfc 8 V s 0 15V fc MOSFET Vps 0V 15 Vas hE Ro ik 60 80 MOSFET E EMI 19 4 1
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