TOREX XP133A1235SR Manual
Contents
1. 55 150 C When implemented on a glass epoxy PCB 1 5 XP133A1235SR MELECTRICAL CHARACTERISTICS DC Characteristics 25 C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut Off Current Idss Vds 20V Vgs 0V 10 UA Gate Source Leak Current 1955 Vgs 12 Vds 0V 1 UA Gate Source Cut Off Voltage Vgs off Id 1mA Vds 10V 0 5 1 2 V Id 3A Vgs 4 5V 0 026 0 035 Q Drain Source On State Resistance Id 3A Vgs 2 5V 0 035 0 048 Q Forward Transfer Admittance Yfs Id 4A Vds 10V 14 S Body Drain Diode lt Forward Voltage Vf If 6A Vgs 0V 0 85 1 1 V Effective during pulse test Dynamic Characteristics Ta 25 C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss z 760 2 it Vds 10V Vgs 0V utput Capacitance 055 f 1MHz 430 x pF Feedback Capacitance Crss 200 Switching Characteristics 25 C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn On Delay Time td on 10 z ns Rise Time tr Vgs 5V Id 3A 20 ns Turn Off Delay Time td off Vdd 10V 2 55 ns Fall Time tf 15 ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance _ Implement on a glass epoxy 7 o Channel Ambience Rth ch a resin PCB 62 5 C2. IN 2 5 XP133A1235SR E TYPICAL PERFORMANCE CHARACTERISTICS Drain Current ld A Drain Source On State Resistance Q Drain Source On State Resistance Rds on 2 1 Drain Current vs Drain Source Voltage Ta 25 C Pulse Test 0 0 5 1 1 5 2 2 5 3 Drain Source Voltage Vds V 3 Drain Source On State Resistance vs Gate Source Voltage Ta 25 C Pulse Test 0 1 0 08 0 06 0 04 0 02 Gate Source Voltage Vgs V 5 Drain Source On State Resistance vs Ambient Temperature Pulse Test 0 1 0 08 0 06 0 04 0 02 50 0 50 100 150 Ambient Temperature Topr C Gate Source Cut Off Voltage Variance 2 Drain Current vs Gate Source Voltage Vds 10V Pulse Test 20 Drain Current ld A Gate Source Voltage Vgs V 4 Drain Source On State Resistance vs Drain Current Ta 25 C Pulse Test Rds on Q Drain Source On State Resistance 0 4 8 12 16 20 Drain Current Id A 6 Gate Source Cut Off Voltage Variance vs Ambient Temperature Vds 10V Id 1mA 0 8 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 50 0 50 100 15 Ambient Temperature Topr C Vgs off Variance V 0 TOIREX 3 5 XP133A1235SR E TYPICAL PERFORMANCE CHARACTERISTICS Continued 4 5 G
3. TOIREX XP133A1235SR Power MOSFET EGENERAL DESCRIPTION The XP133A1235SR is an N channel Power MOSFET with low on state resistance and ultra high speed switching characteristics Two FET devices are built into the one package Because high speed switching is possible the IC can be efficiently set thereby saving energy The small SOP 8 package makes high density mounting possible E APPLICATIONS MFEATURES Notebook PCs Low On State Resistance Rds on 0 035 Q Vgs 4 5V Cellui d aieh Rds on 0 048 Q Vgs 2 5V ree Ultra High Speed Switching On board power supplies Driving Voltage 2 5V Li ion battery systems N Channel Power MOSFET DMOS Structure Two FET Devices Built in Package SOP 8 EPIN CONFIGURATION EPIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION 1 51 Source 2 G1 Gate 3 2 Source 4 G2 Gate 5 6 D2 Drain SOP 8 7 8 D1 Drain TOP VIEW E EQUIVALENT CIRCUIT MM ABSOLUTE MAXIMUM RATINGS Ta 25 C 1 8 PARAMETER SYMBOL RATINGS UNITS pim E 15 Drain Source Voltage Vdss 20 V Gate Source Voltage Vgss 12 V cE he je Drain Current DC Id 6 A cA es 5 Drain Current Pulse Idp 20 A N channel MOSFET Reverse Drain Current Idr 6 A 2 FET devices built in Channel Power Dissipation Pd 2 W Channel Temperature Tch 150 C Storage Temperature Range Tstg
4. ate Source Voltage Vgs V Capacitance C pF Standardized Transition Thermal Resistance 7 s t 7 Capacitance vs Drain Source Voltage 8 Switching Time vs Drain Current 10000 i000 Vgs 5V Vdd 10V PW 10 s duty lt 1 Ta 25 C T 1000 i amp 100 lt E 100 2 10 10 1 0 5 10 15 20 0 2 4 6 8 10 Drain Source Voltage Vds V Drain Current Id A 10 Reverse Drain Current 9 Gate Source Voltage vs Gate Charge vs Source Drain Voltage 10 Vds 10V Id 6A Ta 25 C Pulse Test Ta 25 C F lt 5 6 5 Oo E 2 L 2 oc 0 0 5 10 15 20 25 30 35 0 0 2 0 4 0 6 0 8 1 1 2 Gate Charge Qg Source Drain Voltage Vsd V 11 Standardized transition Thermal Resistance vs Pulse Width Rth ch a 62 5 C W Implemented on a glass epoxy FEB 0 1 0 01 100 Pulse Width PW s XP133A1235SR The products and product specifications contained herein are subject to change without notice to improve performance characteristics Consult us or our representatives before use to confirm that the information in this catalog is up to date We assume no responsibility for any infri
5. ngement of patents patent rights or other rights arising from the use of any information and circuitry in this catalog Please ensure suitable shipping controls including fail safe designs and aging protection are in force for equipment employing products listed in this catalog The products in this catalog are not developed designed or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of or cause significant injury to the user e g Atomic energy aerospace transport combustion and associated safety equipment thereof Please use the products listed in this catalog within the specified ranges Should you wish to use the products under conditions exceeding the specifications please consult us or our representatives We assume no responsibility for damage or loss due to abnormal use All rights reserved No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd TOREX SEMICONDUCTOR LTD TOIREX 5 5
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TOREX XP133A1235SR Manual