TOREX XP133A1145SR Manual
Contents
1. 7 Capacitance vs Drain Source Voltage 8 Switching Time vs Drain Current Vgs 0V f 1MHz Ta 25 C Vgs 5V Vdd 10V PW 10 us duty lt 1 Ta 25 C 10000 1000 T 1000 K 100 v Sa Sa o nni E c Xe e 2 a D gen 10 10 Oo E 1 3 ear 0 10 1 0 5 10 15 20 25 30 0 2 4 6 8 10 Drain Source Voltage Vds V Drain Current Id A 10 Reverse Drain Current 9 Gate Source Voltage vs Gate Charge vs Source Drain Voltage Vds 10V Id 6A Ta 25 C Ta 25 C Pulse Test 10 20 c 8 lt 5 5 s o 6 S 5 o O gs 0V 4 5V gt c 9 4 3 a D p 2 2 D rd 0 0 5 10 15 20 25 0 0 2 0 4 0 6 0 8 1 Gate Charge Qg nc Source Drain Voltage Vsd V 11 Standardized transition Thermal Resistance vs Pulse Width 10 Rth ch a 62 5 C W Implemented on a glass epoxy PCB o o S E B 1 nd T Single Pulse E o hen Fe F041 2 7 S 9 0 01 N eg v o ES o 0 001 0 0001 0 001 0 01 0 1 1 10 100 Pulse Width PW s 4 5 XP133A1145SR The products and product specifications contained herein are subject to change without notice to improve performance characteristics Consult us or our re2. Pd 2 W Channel Temperature Tch 150 C Storage Temperature Range Tstg 55 150 C When implemented on a glass epoxy PCB 1 5 XP133A1145SR MELECTRICAL CHARACTERISTICS DC Characteristics Ta 25 C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut Off Current Idss Vds 30V Vgs 0V 10 UA Gate Source Leak Current Igss Vgs 20V Vds 0V 1 UA Gate Source Cut Off Voltage Vgs off Id 1mA Vds 10V 1 0 2 5 V i Id 3A Vgs 10V 0 026 0 033 Q Drain Source On State Resistance Rds on Id 3A Vgs 4 5V 0 035 0 045 Q Forward Transfer Admittance Yfs Id 3A Vds 10V 12 S Body Drain Diode si Forward Voltage Vf If 6A Vgs 0V 0 85 1 1 V Effective during pulse test Dynamic Characteristics Ta 25 C PARAMETER SYMBOL CONDITIONS MIN TAPA MAX UNITS Input Capacitance Ciss E 620 n pF Out i C Vds 10V Vgs 0V utput Capacitance OSS f 1MHz E 350 s pF Feedback Capacitance Crss z 120 z pF Switching Characteristics Ta 25 C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn On Delay Time td on z 15 z ns Rise Time tr Vgs 5V Id 3A 20 ns Turn Off Delay Time td off Vdd 10V 30 ns Fall Time tf 10 ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a glass epoxy o Channel A
3. TOINEX XP133A1145SR Power MOSFET E GENERAL DESCRIPTION The XP133A1145SR is an N channel Power MOSFET with low on state resistance and ultra high speed switching characteristics Two FET devices are built into the one package Because high speed switching is possible the IC can be efficiently set thereby saving energy The small SOP 8 package makes high density mounting possible E APPLICATIONS FEATURES Notebook PCs Low On State Resistance Rds on 0 033 Q Vgs 10V Rds on 0 045 Q Vgs 4 5V Ultra High Speed Switching Driving Voltage 4 5V Li ion battery systems N Channel Power MOSFET DMOS Structure Two FET Devices Built in Cellular and portable phones On board power supplies Package SOP 8 EPIN CONFIGURATION EPIN ASSIGNMENT s1G PIN NUMBER PIN NAME FUNCTION 1 S1 Source Gil 2 G1 Gate S2 8 3 S2 Source G2 L2 e Gae 5 6 D2 Drain SOF 7 8 D1 Drain TOP VIEW E EQUIVALENT CIRCUIT MM ABSOLUTE MAXIMUM RATINGS Ta 25 C 1 8 PARAMETER SYMBOL RATINGS UNITS 2 7 Drain Source Voltage Vdss 30 Gate Source Voltage Vgss 20 V 3 6 Drain Current DC Id 6 A 4 5 Drain Current Pulse Idp 20 A Reverse Drain Current Idr 6 A N channel MOSFET 2 devices built in Channel Power Dissipation
4. mbience etna resin PCB 7 62 9 eM 2 5 XP133A1145SR BI TYPICAL PERFORMANCE CHARACTERISTICS Drain Source On State Resistance Drain Source On State Resistance 1 Drain Current vs Drain Source Voltage Ta 25 C Pulse Test T D t e S O c E a 0 1 2 3 4 5 Drain Source Voltage Vds V 3 Drain Source On State Resistance vs Gate Source Voltage d Ta 25 C Pulse Test e o Rds on Q o o ER 0 02 0 2 4 6 8 10 Gate Source Voltage Vgs V 5 Drain Source On State Resistance vs Ambient Temperature Pulse Test 50 0 50 100 150 Ambient Temperature Topr C Gate Source Cut Off Voltage Variance Drain Source On State Resistance Drain Current Id A Vgs off Variance V 2 Drain Current vs Gate Source Voltage Vds 10V Pulse Test 20 Gate Source Voltage Vgs V 4 Drain Source On State Resistance vs Drain Current Ta 25 C Pulse Test 0 1 Rds on Q 0 01 Drain Current ld A 6 Gate Source Cut Off Voltage Variance vs Ambient Temperature Vds 10V Id21mA 50 0 50 100 150 Ambient Temperature Topr C TOIREX 3 5 XP133A1145SR E TYPICAL PERFORMANCE CHARACTERISTICS Continued
5. presentatives before use to confirm that the information in this catalog is up to date We assume no responsibility for any infringement of patents patent rights or other rights arising from the use of any information and circuitry in this catalog Please ensure suitable shipping controls including fail safe designs and aging protection are in force for equipment employing products listed in this catalog The products in this catalog are not developed designed or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of or cause significant injury to the user e g Atomic energy aerospace transport combustion and associated safety equipment thereof Please use the products listed in this catalog within the specified ranges Should you wish to use the products under conditions exceeding the specifications please consult us or our representatives We assume no responsibility for damage or loss due to abnormal use All rights reserved No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd TOREX SEMICONDUCTOR LTD TOIREX 5 5
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TOREX XP133A1145SR Manual