TOREX XP131A1145SR Manual
Contents
1. RERFORMANCE CHARACTERISTICS Continued Pulse Width PW s 4 5 XP131A1145SR The products and product specifications contained herein are subject to change without notice to improve performance characteristics Consult us or our representatives before use to confirm that the information in this catalog is up to date We assume no responsibility for any infringement of patents patent rights or other rights arising from the use of any information and circuitry in this catalog Please ensure suitable shipping controls including fail safe designs and aging protection are in force for equipment employing products listed in this catalog The products in this catalog are not developed designed or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of or cause significant injury to the user e g Atomic energy aerospace transport combustion and associated safety equipment thereof Please use the products listed in this catalog within the specified ranges Should you wish to use the products under conditions exceeding the specifications please consult us or our representatives We assume no responsibility for damage or loss due to abnormal use All rights reserved No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd TOREX SEMICONDUCTOR LTD TOIREX 5 52. 50 100 150 Ambient Temperature C TOIREX 3 5 1 1 15 100 25 25 Pulse Test Ta 10 79 1 i 10V PW 10 duty lt 1 10 Zana vs Source Drain Voltage 5 Vdd Drain Current Id A Vgs Source Drain Voltage Vsd V m a F a i ai ia LEE E s iS SSeS 8 Switching Time vs Drain Current 10 Reverse Drain Current gt IN 1000 100 10 0 1 Single P prg 25 C OV f 1MHz Ta 25 C 0 01 10V Id Vgs Vds 0 001 10 Drain Source Voltage Vds V Gate Charge Qg nc 11 Standardized transition Thermal Resistance vs Pulse Width 7 Capacitance vs Drain Source Voltage 9 Gate Source Voltage vs Gate Charge 0 0001 10000 44 V 2 W lt u al gt lt A 5 96 4 jews y 1 6 4d
3. 5V 0 035 0 045 ns Forward Transfer Admittance Yfs Id 4A Vds 10V Body Drain Diode Effective during pulse test Dynamic Characteristics Ta 25 C EA 7 Vds 10V Vgs 0V utput Capacitance Switching Characteristics Ta 25 C Vgs 5V 14 om Thermal Characteristics PARAMETER SYMBOL CONDITIONS 00 2 MAX UNITS a Resistance Rth ch a SE on a glass epoxy channel ambience resin PCB 2 5 XP131A1145SR E YPICAL PERFORMANCE CHARACTERISTICS Drain Source On State Resistance Drain Current ld Drain Source On State Resistance 1 Drain Current vs Drain Source Voltage 25 Drain Source Voltage Vds V 3 Drain Source On State Resistance vs Gate Source Voltage Pulse Test Ta 25 C 0 1 0 08 0 02 Gate Source Voltage Vgs V 5 Drain Source On State Resistance vs Ambint Temperature Pulse Test Ambient Temperature Topr C 2 Drain Current vs Gate Source Voltage Vds T Pulse Test Drain Current ld Gate Source Voltage Vgs V 4 Drain Source On State Resistance vs Drain Current Pulse Test Ta 25 C Drain Source On State Resistance Rds 0 0 01 0 5 10 15 20 25 30 Drain Current ld 6 Gate Source Cut Off Voltage Variance vs Ambient Temperature Vds 10V Ild 1mA 0 8 0 6 Gate Source Cut Off Voltage Variance Vgs off Variance V 0 2 0 4 0 6 0 8 50 0
4. XP131A1145SR Power MOSFET E GENERAL DESCRIPTION TOIREX Lf ETR1101_001 The XP131A1145SR is an N channel Power MOSFET with low on state resistance and ultra high speed switching characteristics Because high speed switching is possible the IC can be efficiently set thereby saving energy The small SOP 8 package makes high density mounting possible E APPLICATIONS Notebook PCs Cellular and portable phones On board power supplies Li ion battery systems CONFIGURATION SOP 8 TOP VIEW MEQUIVALENT CIRCUIT N channel MOSFET 1 device built in MFEATURES Low On State Resistance Rds on 0 03 0 Vgs 10V Rds on 0 045 Q Vgs 4 5V Ultra High Speed Switching Driving Voltage 4 5V N Channel Power MOSFET DMOS Structure Package SOP 8 EPIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION E ABSOLUTE MAXIMUM RATINGS Ta 25 C PARAMETER SYMBOL RATINGS UNITS Drain Source Voltage Drain Current Pulse pew fe Reverse Drain Current Continuous Channel 25 Power Dissipation Channel Temperature at ate Storage Temperature Range 55 150 When implemented on a glass epoxy PCB XP131A1145SR MELECTRICAL CHARACTERISTICS DC Characteristics 25 C PARAMETER SYMBOL CONDITIONS UNITS Gate Source Cut Off Voltage Vgs off Id 1mA Vds 10V 25 v Id 4A Vgs 10V 0 025 0 030 Q Drain Source On state Resistance Rds on Id 4A Vgs 4
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TOREX XP131A1145SR Manual