新特性及用法
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1. 200 mA dig dt 2 8 125 C IT 10 30V Vp 70 67 din dt 30 A us dv dt 20 V us Gate open Linear slope up to 0 67 VpnM specified Gate open For higher guaranteed values please consult us CASE DESCRIPTION DESCRIPTION DU BOITIER 6 1 4 28 UNF Cooling method by conduction method Marking type number Weight 13 5 19 Polarity anode to case Stud torque 3 5 A Nmin 3 8 m Nmax Thread 1 4 28 UNF type M6 on request type suffix M 25 1 5 TO 48 metal CB 267 2 5 THOMSON SEMICONDUCTORS 152 Ed p a TERRAE AVERAGE POWER DISSIPATION 8 MAXIMUM ALLOWABLE CASE TEMPERATURE 90 _ ZA 1121 22 22 E 2 0 10 15 25 30 35 40 45 0 5 10 48 20 25 30 35 40 45 AVERAGE CURRENT Ir av AVERAGE CURRENT FIG 4 MAXIMUM ON STATE POWER DISSIPATION FIG 2 MAXIMUM ALLOWABLE CASE TEMPERATURE FOR SINUSOIDAL CURRENT WAVEFORM FOR SINUSOIDAL CURRENT WAVEFORM AVERAGE POWER DISSIPATION MAXIMUM ALLOWABLE CASE TEMPERATURE C 45 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 AVERAGE CURRENT Ir AVERAGE CURRENT 17 FIG 3 MAXIMUM ON STATE DISSIPATION FIG 4 MAXIMUM ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM FOR RECTANGULAR2. m ra rtt 0145 2 11 1 1 4 4 11111341 F O INT TL 011 e 100 9A 31 9 GATE CURRENT Ig i 216 8 TRIGGER CHARACTERISTICS m 4 Q gt f o o resistance C W junction to case 052711 e e 1 827 s9NvVO3dWI VWH3HL LNSISNYHI 10 1071 TIME t s FIG 10 TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE 1072 5 5 THOMSON SEMICONDUCTORS 155
3. CURRENT WAVEFORM 3 5 THOMSON SEMICONDUCTORS 153 TS 135 TS 1235 1000 100 52 SNIlVH 321 v Sli iNguuno 31V15 NO 3AYM INIS 41 2 00 ra 95 8 Bsp em 21 2 i5 NE t v 41 1 2 1 15 0 SNOINYLNYLSNI PULSE BASE WIDTH t ms 1 NON REPETITIVE SUB CYCLE SURGE 16 5 MAXIMUM ON ON STATE CURRENT AND 126 RATING INITIAL Tj 125 90 STATE CONDUCTION CHARACTERISTIC Tj 42590 v WSLI iN3uuno 31915 0 39HnS 2ALLIL3d3H NUMBER CYCLES at 50 Hz NON REPETITIVE SURGE PEAK ON STATE CURRENT VERSUS NUMBER OF CYCLES FIG 7 4 5 THOMSON SEMICONDUCTORS 154 153 19 14434 D D 55 5 OL cl 012 4 SNIA dI fW JUNCTION TEMPERATURE Tj FIG 8 RELATIVE TRIGGER CURRENT AND HOLDING CURRENT VERSUS JUNCTION TEMPERATURE 10 6 MXIALA LL ___ LX MI HAM TIN T DLL LZAMDLLL _ MN _ _ 47 EL A
4. UE NICO ag 15 TS 135 TS 1235 SEMICONDU ie 478 er AE posu s t 16 47 _ RERO Dem S decet General purpose SCR suited for power supplies up to 400 Hz on resistive or inductive loads to 1 200 V VDRM e Glass passivated chlps 100V lt x 12007 e High stability and reliability IT RMS 35 Tease 75 Thyristors usage g n ral pour des alimentations Case 48 metal 267 jusqu 400 Hz sur charges r sistives ou inductives Boitier VgnM jusqu 1200 V e Pastilles glassiv es e Grande stabilit des caract ristiques ABSOLUTE RATINGS LIMITING VALUES i VALEURS LIMITES ABSOLUES D UTILISATION Unit RMS on state current IT RMS 35 Courant efficace l tat passant Tcase 75 Mean on state current 22 5 Courant moyen l tat passant G Tcase 75 A A Non repetitive surge peak on state current ITSM 360 8 3 Courant non r p titif de surcharge cr te ITSM accidentelle l tat passant Storage and operating junction temperatures t Tj QT 125 C 5 135 5 1235 330 10 ms QT lt 1250 I2 t for fusing pom 545 _ t 10 ms 25 Valeur de la constante 121 QT lt 125 C Critical rate of rise of on state current di dt Alus Vitesse critique d croissance du courant l tat passant E Te
5. mp ratures extr mes de stockage et de Jonction en fonctionnement TS 235 TS 435 TS 635 TS 835 TS 1035 w s Rth 0 0 11 C W 40 125 Thermal resistances R sistances thermiques Junction to case for D C Jonction boitier en continy Contact case to heatsink Contact boitier radiateur Rth c h 04 Single phase circuit 180 conduction angle Half sine wave Circuit monophas angle de conduction 180 Dem i oride sinusoidale Gate supply 20 V 20 0 tr lt 0 1 us Half sine wave of 6 3 G n rateur de g chette Demi sinusoida May 1984 1 5 THOMSON SEMICONDUCTORS 45 avenue de l Europe 78140 V LIZY France THOMSON T l 9446 97 19 T lex 698 866 F 151 COMPONENTS GATE CHARACTERISTICS Maximum values TS 135 TS 1235 7 45 7 CARACT RISTIQUES DE GACHETTE Valeurs maximales 60W t 500 Paav 1 ELECTRICAL CHARACTERISTICS CARACTERISTIQUES ELECTRIQUES mn 2 1 10 A t 500 us 75V VFGM 15 V 500 us Test conditions Tj 2590 Vp 12V RL 930 tp gt 20 us Tj 2590 Vp 12V RL 330 tp 20 uS Vp RL 05 Gate open 70 tp 10 5 VDRM specified VRRM Specified Tj 25 Me IT 70 Vp
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